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- Balmer, Richard S., et al.
(author)
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Transport behavior of holes in boron delta-doped diamond structures
- 2013
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:3, s. 033702-
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Journal article (peer-reviewed)abstract
- Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.
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