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- Lee, Jae-chul, et al.
(författare)
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Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications
- 2014
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Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 585, s. 94-97
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Tidskriftsartikel (refereegranskat)abstract
- ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0001) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (alpha h upsilon)(2) vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.
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