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- Thungström, Göran, 1960-, et al.
(author)
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Investigation of radiation hardness in lateral position sensitive detector, irradiated with 13.5 nm photons
- 2018
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In: Journal of Instrumentation. - : IOP PUBLISHING LTD. - 1748-0221. ; 13
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Journal article (peer-reviewed)abstract
- Radiation hardness measurements have been done by irradiating lateral position sensitive (Si) detectors (LPSD) with 93 eV photons. Three different passivation layers have been investigated, SiO2, oxynitride and deposited 4 nm titanium-layer, on p in n-substrate LPSD and deposited 4 nm titanium layer on n in p-substrate LPSD. Best radiation hardness for 93 eV photon is obtained by using a 4 nm titanium layer. Only a slight decrease in response can be seen in the p in n-substrate LPSD. The best radiation hardness is achieved by using the n in p-substrate LPSD, which show no significant decrease in response. Scanning after irradiation with 93 eV gives only a variation in response of 0.26% in the surrounding area of exposure. No decrease in response can be detected during the scan. Test with a 108 eV photon beam gives an increased variation in response of 0.7%, caused by the shallower absorption in Si.
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