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  • Enlund, Johannes, et al. (author)
  • Anisotropic dry etching of boron doped single crystal CVD diamond
  • 2005
  • In: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 43:9, s. 1839-1842
  • Journal article (peer-reviewed)abstract
    • Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Olsson, Jörgen (1)
Karlsson, Mikael (1)
Isberg, Jan (1)
Nikolajeff, Fredrik (1)
Enlund, Johannes (1)
Twitchen, Daniel J. (1)
University
Uppsala University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2005 (1)

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