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- Nicolaï, L., et al.
(författare)
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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study
- 2019
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
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Tidskriftsartikel (refereegranskat)abstract
- The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.
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