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1.
  • Aniktar, H, et al. (author)
  • 850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier
  • 2006
  • In: Proceedings of European Microwave Week 2006. ; , s. 403-406
  • Conference paper (peer-reviewed)abstract
    • This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Sjöland, Henrik (1)
Aniktar, H (1)
H, Mikkelsen, J (1)
Larsen, T (1)
University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2006 (1)

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