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  • Wen, C. -Y., et al. (author)
  • Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires
  • 2011
  • In: Physical Review Letters. - 1079-7114. ; 107:2
  • Journal article (peer-reviewed)abstract
    • Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Park, J. H. (1)
Tersoff, J. (1)
Reuter, M. C. (1)
Ross, F. M. (1)
Kodambaka, S (1)
Hillerich, Karla (1)
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Stach, E. A. (1)
Wen, C. -Y. (1)
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University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2011 (1)

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