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1.	Whitlow, Harry J, et al. (author) Formation of cobalt silicide from filter metal vacuum arc deposited films 2006 In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - : Elsevier BV. - 0168-583X. ; 247:2, s. 271-278 Journal article (peer-reviewed)abstract The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 degrees C and CoSi2 at (700-800 degrees C). At 900 degrees C, CiSi(2) was formed with a mixture of cubic cobalt and probably an amorphous cobalt oxide surface layer. The interface morphology was a rough cusp-like crenelation at 600 degrees C which became less pronounced after annealing at 800 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

Whitlow, Harry J, et al. (author)
Formation of cobalt silicide from filter metal vacuum arc deposited films
2006
In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - : Elsevier BV. - 0168-583X. ; 247:2, s. 271-278
Journal article (peer-reviewed)abstract
- The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 degrees C and CoSi2 at (700-800 degrees C). At 900 degrees C, CiSi(2) was formed with a mixture of cubic cobalt and probably an amorphous cobalt oxide surface layer. The interface morphology was a rough cusp-like crenelation at 600 degrees C which became less pronounced after annealing at 800 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

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