SwePub - sökning: id:"swepub:oai:lup.lub.lu.se:e...

Träfflista för sökning "id:"swepub:oai:lup.lub.lu.se:ebc70878-aff2-4504-8d89-5ee777ae1b4a" "

Sökning: id:"swepub:oai:lup.lub.lu.se:ebc70878-aff2-4504-8d89-5ee777ae1b4a"

Sortera/gruppera träfflistan

Sortering: Träffar per sida:

Numrering	Referens	Omslagsbild	Hitta
1.	Berg, Martin, et al. (författare) InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers. 2014 Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:48 Tidskriftsartikel (refereegranskat)abstract Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.

Skapa referenser, mejla, bekava och länka

Träfflista för sökning "id:"swepub:oai:lup.lub.lu.se:ebc70878-aff2-4504-8d89-5ee777ae1b4a" "