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  • Sveinbjörnsson, Einar, 1964, et al. (author)
  • Electroluminescence from silicon p-n junctions prepared by wafer bonding
  • 1998
  • In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 264-
  • Conference paper (peer-reviewed)abstract
    • We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Weber, J. (1)
Bengtsson, Stefan, 1 ... (1)
Sveinbjörnsson, Eina ... (1)
Keskitalo, N. (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
1998 (1)

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