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1.	Johansson, Mikael, et al. (författare) ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes 2002 Ingår i: ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference. ; , s. 419- Konferensbidrag (refereegranskat)abstract In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C

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