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  • Bengtsson, Stefan, 1961 (author)
  • Characterization of thin SOI layers
  • 1995
  • In: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 221-
  • Conference paper (peer-reviewed)abstract
    • Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Bengtsson, Stefan, 1 ... (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
1995 (1)

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