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- LeGoues, F. K., et al.
(författare)
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Cyclic growth of strain-relaxed islands
- 1994
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Ingår i: Physical Review Letters. - 0031-9007. ; 73:2, s. 300-303
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Tidskriftsartikel (refereegranskat)abstract
- Growth of Ge islands on Si(001) is observed in real time with high spatial resolution, using UHV transmission electron microscopy. We are able to monitor the formation of successive strain-relieving dislocations. The shape of the island oscillates as it grows, with each cycle corresponding to the introduction of one dislocation. Such growth cycles are shown to be a general feature of the growth of strain-relaxed islands, occurring even in equilibrium. © 1994 The American Physical Society.
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