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  • Asghar, M., et al. (author)
  • Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
  • 2012
  • In: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
  • Conference paper (peer-reviewed)abstract
    • In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Syväjärvi, Mikael (1)
Asghar, M (1)
Jokubavicius, Valdas (1)
Iqbal, F. (1)
Faraz, Sadia (1)
Wahab, Qamar (1)
University
Linköping University (1)
Language
English (1)
Year
2012 (1)

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