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Numrering	Referens	Omslagsbild	Hitta
1.	Amirfeiz, Petra, 1973, et al. (författare) Hydrophobic low temperature wafer bonding; void formation in the oxide free interface 2003 Ingår i: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267- Konferensbidrag (refereegranskat)abstract The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.

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