SwePub - sökning: onr:"swepub:oai:research.chalm...

Träfflista för sökning "onr:"swepub:oai:research.chalmers.se:c963030c-3d29-473b-ba59-593940eb060e" "

Sökning: onr:"swepub:oai:research.chalmers.se:c963030c-3d29-473b-ba59-593940eb060e"

Sortera/gruppera träfflistan

Sortering: Träffar per sida:

Numrering	Referens	Omslagsbild	Hitta
1.	Cha, Eunjung, 1985, et al. (författare) A 300-mu W Cryogenic HEMT LNA for Quantum Computing 2020 Ingår i: PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS). - 0149-645X .- 2576-7216. - 9781728168159 ; , s. 1299-1302 Konferensbidrag (refereegranskat)abstract This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 mu W. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.

Skapa referenser, mejla, bekava och länka

Träfflista för sökning "onr:"swepub:oai:research.chalmers.se:c963030c-3d29-473b-ba59-593940eb060e" "