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Träfflista för sökning "(swepub) pers:(Larsson Anders) pers:(Larsson Anders 1957) pers:(Haglund Åsa 1976) pers:(Gustavsson Johan 1974) srt2:(2005-2009)"

Search: (swepub) pers:(Larsson Anders) pers:(Larsson Anders 1957) pers:(Haglund Åsa 1976) pers:(Gustavsson Johan 1974) > (2005-2009)

  • Result 11-20 of 25
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11.
  • Kögel, Benjamin, 1979, et al. (author)
  • Short-wavelength tunable VCSELs
  • 2009
  • In: European Semiconductor Laser Workshop (ESLW).
  • Conference paper (other academic/artistic)
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14.
  • Larsson, Anders, 1957, et al. (author)
  • VCSELs for broadband access and interconnects
  • 2009
  • In: Proc. 2009 International Nano-Optoelectronics Workshop, Stockholm-Berlin, August 2009. ; , s. 87-88
  • Conference paper (peer-reviewed)
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16.
  • Ou, Yiyu, et al. (author)
  • Impedance characteristics and parasitic speed limitations of high speed 850 nm VCSELs
  • 2009
  • In: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21, s. 1840-
  • Journal article (peer-reviewed)abstract
    • Abstract—The impedance characteristics of high-speed oxideconfined 850-nm vertical-cavity surface-emitting lasers have been studied with the aim of identifying the importance of device parasitics for the modulation bandwidth. Through equivalent circuit modeling, it is confirmed that device parasitics have a major impact on the bandwidth and the importance of each individual circuit element has been investigated. According to the extrapolation of the parameters derived from S11 measurements below 20 GHz towards higher frequencies and assuming that the mesa capacitance can be reduced by adding a few extra oxide layers without significantly affecting series resistance, our model predicts that the 3-dB parasitic frequency can be increased from 22 to above 30 GHz. Accounting also for bandwidth limitations due to thermal effects, we expect an increase of the modulation bandwidth of several gigahertz which may enable direct current modulation at 40 Gb/s.
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18.
  • Westbergh, Petter, 1981, et al. (author)
  • 32 Gb/s transmission experiments using high speed 850 nm VCSELs
  • 2009
  • In: Conference on Lasers and Electro-Optics (CLEO). - 2162-2701. - 9781557528698 ; , s. 1-2
  • Conference paper (peer-reviewed)abstract
    • We demonstrate error free transmission at bit rates up to 32 Gb/s at room temperature and 25 Gb/s at 85degC using a 9 mum oxide aperture 850 nm VCSEL. The VCSEL design is optimized for high speed operation by minimizing parasitics, reducing self-heating, and using strained InGaAs quantum wells to improve differential gain.
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19.
  • Westbergh, Petter, 1981, et al. (author)
  • 32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL
  • 2009
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 45:7, s. 366 - 368
  • Journal article (peer-reviewed)abstract
    • Error free transmission over multimode fibre at data rates up to 32 Gbit/s at 25C and 25 Gbit/s at 85C using an oxide confined 850 nm VCSEL biased at a current density of 11–14 kA/cm2 is demonstrated. The VCSEL is optimised for high-speed by reducing capacitance and self-heating and by using strained InGaAs quantum wells for high differential gain.
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20.
  • Westbergh, Petter, 1981, et al. (author)
  • A high-speed laser for future data-communication links
  • 2009
  • In: SPIE Newsroom. - : SPIE-Intl Soc Optical Eng. - 1818-2259.
  • Journal article (other academic/artistic)abstract
    • Optimized designs significantly improve the transmission rate of standard short-wavelength light sources.
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  • Result 11-20 of 25

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