| 11. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
- 2016
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510600010 ; 9766
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Konferensbidrag (refereegranskat)abstract
- We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
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| 12. |
- Haglund, Erik, 1985, et al.
(författare)
-
High-power single transverse and polarization mode VCSEL for silicon photonics integration
- 2019
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 27:13, s. 18892-18899
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Tidskriftsartikel (refereegranskat)abstract
- © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
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| 13. |
- Haglund, Emanuel, 1988, et al.
(författare)
-
Hybrid vertical-cavity laser integration on silicon
- 2017
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606852 ; 10122, s. 101220H-
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Konferensbidrag (refereegranskat)abstract
- The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
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| 14. |
- Haglund, Emanuel, 1988, et al.
(författare)
-
Impact of Bonding Interface Thickness on the Performance of Silicon-Integrated Hybrid-Cavity VCSELs
- 2016
-
Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; , s. Article no 7765752-
-
Konferensbidrag (refereegranskat)abstract
- The dependence of the performance of short-wavelength silicon-integrated hybrid-cavity VCSELs on the thickness of the bonding interface used for the heterogeneous integration has been studied. Performance measures investigated include the emission wavelength, thermal impedance, and variation of threshold current and output power with temperature.
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| 15. |
- Haglund, Emanuel, 1988, et al.
(författare)
-
Silicon-Integrated 850-nm Hybrid-Cavity VCSEL
- 2015
-
Ingår i: Optics and Photonics in Sweden, 28-29 Oct. 2015.
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Silicon photonics is a promising energy-efficient and cost-effective platform for optical integrated circuits. However, due to its indirect bandgap silicon cannot be used to produce effective light sources. An attractive solution to this is heterogeneous integration of the GaAs-based vertical-cavity surface-emitting laser (VCSEL) on silicon. The GaAs-based VCSEL has proven to be both high-speed and energy efficient, with data rates above 70 Gb/s and less than 100 fJ/bit dissipated power up to 50 Gb/s.By employing ultra-thin divinylsiloxane-is-benzocyclobutene (DVS-BCB) adhesive bonding a GaAs-based “half-VCSEL” with a gain region and a top distributed Bragg Reflector (DBR) has been attached to a dielectric DBR on silicon. This creates a hybrid cavity where the standing-wave optical field is extending into both the silicon and GaAs-based parts of the cavity.The hybrid-cavity may eventually enable light to be tapped off to an in-plane waveguide, e.g. using a high contrast grating (HCG) instead of the bottom DBR. Replacing the whole bottom DBR with an HCG also gives the possibility to set the wavelength according to the grating parameters, enabling fabrication of multi-wavelength VCSEL arrays that together with integrated wavelength multiplexers could form 850-nm wavelength division multiplexed (WDM) transmitters.A 9 µm oxide aperture diameter VCSEL has a threshold current of 1.2 mA and a maximum output power of 1.6 mW at ~845 nm. The performance is currently limited by the too small gain-to-resonance detuning and the high thermal impedance.
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| 16. |
- Haglund, Emanuel, 1988, et al.
(författare)
-
Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance
- 2017
-
Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 23:6, s. 1700109-
-
Tidskriftsartikel (refereegranskat)abstract
- The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.
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| 17. |
- Haglund, Emanuel, 1988, et al.
(författare)
-
Silicon-integrated short-wavelength hybrid-cavity VCSEL
- 2015
-
Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 23:26, s. 33634-33640
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.
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| 18. |
- Haglund, Emanuel, 1988, et al.
(författare)
-
Silicon-integrated short-wavelength VCSELs
- 2017
-
Ingår i: Proc. European Semiconductor Laser Workshop. ; , s. C21-
-
Konferensbidrag (refereegranskat)abstract
- GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.
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| 19. |
- Haglund, Erik, 1985, et al.
(författare)
-
Vertical-Cavity Silicon-Integrated Lasers by Bonding and Transfer Printing
- 2018
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. ; 2018-September, s. 241-242
-
Konferensbidrag (refereegranskat)abstract
- We present the design and performance of the first current-driven hybrid-vertical-cavity silicon-integrated laser with in-plane waveguide emission. We also show results from preliminary work on transfer printing for large-scale integration of such light sources on silicon photonic integrated circuits.
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| 20. |
- Kumari, Sulakshna, et al.
(författare)
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Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
- 2017
-
Ingår i: IEEE Photonics Journal. - 1943-0655. ; 9:4, s. 1504109-
-
Tidskriftsartikel (refereegranskat)abstract
- A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm−1, respectively, for the lasing.
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