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Träfflista för sökning "WFRF:(Bengtsson Stefan 1961) "

Sökning: WFRF:(Bengtsson Stefan 1961)

  • Resultat 11-20 av 117
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  • Bengtsson, Stefan, 1961, et al. (författare)
  • Carbon-based nanoelectromechanical devices
  • 2011
  • Ingår i: International Journal of High Speed Electronics and Systems. - 1793-6438. ; 20:1, s. 195-204
  • Tidskriftsartikel (refereegranskat)abstract
    • Carbon-based nanoelectromechanical devices are approaching applications in electronics. Switches based on individual carbon nanotubes deliver record low off-state leakage currents. Arrays of vertically aligned carbon nanotubes or nanofibers can be fabricated to constitute varactors. Very porous, low density arrays of quasi-vertically aligned arrays of carbon nanotubes behave mechanically as a single unit with very unusual material properties.
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  • Bengtsson, Stefan, 1961, et al. (författare)
  • Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
  • 1990
  • Ingår i: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1-
  • Konferensbidrag (refereegranskat)abstract
    • Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
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  • Bengtsson, Stefan, 1961 (författare)
  • Characterization of thin SOI layers
  • 1995
  • Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 221-
  • Konferensbidrag (refereegranskat)abstract
    • Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding
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  • Bengtsson, Stefan, 1961, et al. (författare)
  • Charge densities at silicon interfaces prepared by wafer bonding
  • 1990
  • Ingår i: 1990 IEEE SOS/SOI Technology Conference.. ; , s. 77-
  • Tidskriftsartikel (refereegranskat)abstract
    • It is found that Si/Si and Si/SiO2 interfaces exhibit different interface charge properties when bonded at comparable temperatures and surface treatments. Thermally grown oxides were bonded to bare silicon surfaces and the bonded Si/SiO2 interface was investigated on MOS-structures by the C-V technique. Interfaces prepared at temperatures in the range 900-1100°c exhibited U-shaped interface state densities. Si/Si samples were prepared using a hydrophilizing surface treatment before wafer bonding. At the same annealing temperatures, the interface state densities of the bonded Si/Si interfaces were in the range 1011-1013 cm-2 eV-1. Si/Si interfaces are found to be very sensitive to prebond chemical treatment, while Si/SiO2 interfaces are not. Native oxides at bonded silicon interfaces have a more pronounced influence on Si/Si interfaces than on Si/SiO2 interfaces
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  • Resultat 11-20 av 117
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refereegranskat (112)
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Bengtsson, Stefan, 1 ... (113)
Lundgren, Per, 1968 (25)
Engström, Olof, 1943 (19)
Ericsson, Per, 1968 (13)
Enoksson, Peter, 195 ... (13)
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Berg, Jonas, 1973 (10)
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