| 11. |
- Carlberg, Patrick, et al.
(författare)
-
Nanoimprint - a tool for realizing nano-bio research
- 2004
-
Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
-
Konferensbidrag (refereegranskat)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
|
|
| 12. |
- Conache, Gabriela, et al.
(författare)
-
AFM-based manipulation of InAs nanowires
- 2008
-
Ingår i: Proceedings of the IVC-17 (17th International Vacuum Congress) [also] ICSS-13 (13th International Conference on Surface Science) [also] ICN+T-2007 (International Conference on Nanoscience and Technology). - Bristol : Institute of Physics (IOP). ; 100, s. 052051-052051
-
Konferensbidrag (refereegranskat)abstract
- A controlled method of manipulation of nanowires was found using the tip of an Atomic Force Microscope (AFM). Manipulation is done in the ‘Retrace Lift’ mode, where feedback is turned off for the reverse scan and the tip follows a nominal path. The effective manipulation force during the reverse scan can be changed by varying an offset in the height of the tip over the surface. Using this method, we have studied InAs nanowires on different substrates. We have also investigated interactions between wires and with gold features patterned onto the substrates.
|
|
| 13. |
- Conache, Gabriela, et al.
(författare)
-
Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
- 2010
-
Ingår i: Physical Review B Condensed Matter. - College Park, Md. : American Physical Society. - 0163-1829 .- 1095-3795. ; 82:3
-
Tidskriftsartikel (refereegranskat)abstract
- By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This increase in friction with the normal force implies that the mesoscopic nanowire-surface system behaves like a macroscopic contact, despite the nanometer size of the contact in the direction of motion. The demonstrated bias-controlled friction has potential applications in MEMS/NEMS devices.
|
|
| 14. |
- Conache, Gabriela, et al.
(författare)
-
Comparative friction measurements of InAs nanowires on three substrates
- 2010
-
Ingår i: Journal of Applied Physics. - College Park, MD : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 108:9
-
Tidskriftsartikel (refereegranskat)abstract
- We have investigated friction between InAs nanowires and three different substrates: SiO2, fluorosilanized SiO2, and Si3N4. The nanowires were pushed laterally with the tip of an atomic force microscope and the friction force per unit length for both static and sliding friction was deduced from the equilibrium shape of the bent wires. On all three substrates, thick wires showed a difference between sliding and static friction of up to three orders of magnitude. Furthermore, all substrates display a transition to stick-slip motion for nanowires with a diameter of less than about 40 nm. Hydrophobic and hydrophilic substrates display similar friction behavior suggesting that a condensed water layer does not strongly influence our results. The patterns and trends in the friction data are similar for all three substrates, which indicates that they are more fundamental in character and not specific to a single substrate. ©2010 American Institute of Physics.
|
|
| 15. |
- Conache, Gabriela, et al.
(författare)
-
Friction measurements of InAs nanowires on Silicon nitride by AFM manipulation
- 2009
-
Ingår i: Small. - Weinheim, Germany : Wiley-VCH Verlagsgesellschaft. - 1613-6810 .- 1613-6829. ; 5:2, s. 203-207
-
Tidskriftsartikel (refereegranskat)abstract
- A study was conducted to perform friction measurements of InAs nanowires (NW) on silicon nitride (Si 3N 4) through atomic force microscopy (AFM) manipulation. The investigations revealed the friction force per unit length for sliding and static friction over a range of nanowire diameters. It was found that there is a significant difference between the coefficients of the two sliding modes for large wires. It was also found that the difference between the two sliding modes disappears at smaller diameters and the sliding friction becomes equal with the static friction. The AFM investigations were performed on a Nanoscope IIIa Dimension 3100, using rectangular cantilevers, with a nominal spring constant of 30 N m -1. The nanowires were manipulated, using the 'Retrace Lift' mode of the AFM controller. The friction force per unit length was gathered from the local curvature of the NWs, using standard elasticity theory.
|
|
| 16. |
- Conache, Gabriela, 1977-, et al.
(författare)
-
Nanowire friction with an applied bias
- 2009
-
Konferensbidrag (refereegranskat)abstract
- Recently, we have shown how the friction acting on nanowires pushed across a surface by an AFM tip can be determined by measuring the radius of curvature of the bent wire aŸer manipulation. This technique allows us to study the friction properties of an extended mesoscale contact. Our main focus has been to determine whether such contacts behave like macroscopic objects, in which dišerences between the 'true' and 'apparent' contact areas play a key role and friction varies linearly with the applied normal force, or whether they are more like atomic-scale point contacts, wheremore fundamental processes dominate and friction oŸen is independent of the normal force. In this work we show how the friction between InAs nanowires and an insulating silicon nitride layer on a conductive silicon substrate varies when a DC voltage is applied to the AFM tip during manipulation. e tip charges the capacitor formed by the wire and the grounded silicon back contact, giving rise to attractive Coulomb forces and thus increasing the contact pressure between the wire and the silicon nitride. In this way we can vary the normal force on the sliding surfaces using a single wire, with a constant structure and contact geometry. Using nanowires of about 40-50 nm diameter and a few microns in length we have applied tip voltages in the range +12 to -12 V. Simplemodeling indicates that these voltages su›ce to give similar levels of band-lling and depletion to when the same wires are used in working wrap-gate or back-gate devices. A monotonic increase of the sliding friction with the voltage applied on the tip was observed. is implies that the friction increases with the normal force and that this mesoscopic system behaves more like a macroscopic contact, despite the nanometer size of the contact in the direction of motion.
|
|
| 17. |
|
|
| 18. |
- Eriksson Linsmeier, Cecilia, et al.
(författare)
-
Nanowire Biocompatibility in the Brain - Looking for a Needle in a 3D Stack.
- 2009
-
Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 9:12, s. 4184-4190
-
Tidskriftsartikel (refereegranskat)abstract
- We investigated the brain-tissue response to nanowire implantations in the rat striatum after 1, 6, and 12 weeks using immunohistochemistry. The nanowires could be visualized in the scar by confocal microscopy (through the scattered laser light). For the nanowire-implanted animals, there is a significant astrocyte response at week 1 compared to controls. The nanowires are phagocytized by ED1 positive microglia, and some of them are degraded and/or transported away from the brain.
|
|
| 19. |
- Håkanson, Ulf, et al.
(författare)
-
Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy
- 2002
-
Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
-
Konferensbidrag (refereegranskat)abstract
- Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made
|
|
| 20. |
- Håkanson, Ulf, et al.
(författare)
-
Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
- 2002
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:3, s. 494-496
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
|
|
