| 11. |
- Laukkanen, P., et al.
(author)
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Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate : Violation of the electron counting model
- 2010
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 81:3
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Journal article (peer-reviewed)abstract
- By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2X6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2X6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2X6) reconstruction and semiconducting (4X3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2X6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2X6) surface includes metallic areas with the stable c(2X6) atomic structure and semiconducting areas with the stable (4X3) atomic structure.
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| 12. |
- Laukkanen, P., et al.
(author)
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Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
- 2010
-
In: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 177:1, s. 52-57
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Journal article (peer-reviewed)abstract
- We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.
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| 13. |
- Laukkanen, P., et al.
(author)
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Formation and destabilization of Ga interstitials in GaAsN : Experiment and theory
- 2012
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 86:19, s. 195205-
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Journal article (peer-reviewed)abstract
- Using first-principles total energy calculations we have found complex defects induced by N incorporation in GaAsN. The formation energy of the Ga interstitial atom is very significantly decreased due to local effects within the defect complex. The stability of the Ga interstitials is further increased at surfaces. The present results suggest that the energetically favorable Ga interstitial atoms are much more abundant in GaAsN than the previously considered N defects, which have relatively large formation energies. Our synchrotron radiation core-level photoemission measurements support the computational results. The formation of harmful Ga interstitials should be reduced by incorporating large group IV B atoms in GaAsN.
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| 14. |
- Laukkanen, P., et al.
(author)
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Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides
- 2011
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:23, s. 231908-1-231908-3
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Journal article (peer-reviewed)abstract
- Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
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| 15. |
- Punkkinen, Marko Patrick John, et al.
(author)
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Adhesion of the iron-chromium oxide interface from first-principles theory
- 2013
-
In: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 25:49, s. 495501-
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Journal article (peer-reviewed)abstract
- We determine the interface energy and the work of separation of the Fe/Cr2O3 interface using first-principles density functional theory. Starting from different structures, we put forward a realistic interface model that is suitable to study the complex metal-oxide interaction. This model has the lowest formation energy and corresponds to an interface between Fe and oxygen terminated Cr2O3. The work of separation is calculated to be smaller than the intrinsic adhesion energy of pure Fe or Cr2O3, suggesting that stainless steel surfaces should preferentially break along the metal-oxide interface. The relative stabilities and magnetic interactions of the different interfaces are discussed. Next we introduce Cr atoms into the Fe matrix at different positions relative to the interface. We find that metallic Cr segregates very strongly to the (FeCr)/Cr2O3 interface, and increases the separation energy of the interface, making the adhesion of the oxide scale mechanically more stable. The Cr segregation is explained by the enthalpy of formation.
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| 16. |
- Punkkinen, Marko Patrick John, et al.
(author)
-
Compressive Surface Stress in Magnetic Transition Metals
- 2011
-
In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 106:5, s. 057202-
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Journal article (peer-reviewed)abstract
- Because of the increased electron density within the surface layer, metal surfaces are generally expected to have tensile surface stress. Here, using first-principles density functional calculations, we demonstrate that in magnetic 3d metals surface magnetism can alter this commonly accepted picture. We find that the thermodynamically stable surfaces of chromium and manganese possess compressive surface stress. The revealed negative surface stress is shown to be ascribed to the enhanced magnetic moments within the surface layer relative to the bulk values.
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| 17. |
- Punkkinen, Marko Patrick John, et al.
(author)
-
Oxidized In-containing III-V(100) surfaces : Formation of crystalline oxide films and semiconductor-oxide interfaces
- 2011
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83:19, s. 195329-
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Journal article (peer-reviewed)abstract
- Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods.
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| 18. |
- Ropo, M., et al.
(author)
-
First-principles atomistic study of surfaces of Fe-rich Fe-Cr
- 2011
-
In: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 23:26, s. 265004-
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Journal article (peer-reviewed)abstract
- The surface properties of Fe-rich ferromagnetic Fe-Cr alloys are investigated using a first-principles quantum-mechanical method. In dilute alloys, the surfaces are dominated by Fe, whereas the Cr-containing surfaces become favorable when the bulk Cr concentration exceeds the limit of similar to 10 atomic per cent. The abrupt change in the surface behavior is the consequence of complex competing magneto-chemical interactions between the alloying atoms. Considering the quantities of various features: equilibrium surface profiles, chemical potentials, segregation energies, surface energies, magnetic moments, mixing energies and pair interactions, within a wider range of bulk and surface concentrations enables us to build a comprehensive picture of the physics of Fe-Cr surfaces. Using the present achievements many previously controversial results can now be merged into a consistent model of Fe-rich Fe-Cr alloys.
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| 19. |
- Zhang, Huaeli, et al.
(author)
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Elastic parameters of paramagnetic iron-based alloys from first-principles calculations
- 2012
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 85:5, s. 054107-
-
Journal article (peer-reviewed)abstract
- The elastic properties of paramagnetic (PM) Fe1-xMx (M = Al, Si, V, Cr, Mn, Co, Ni, and Rh; 0 <= x <= 0.1) solid solutions in the body-centered-cubic (bcc) and face-centered-cubic (fcc) structures are investigated using the exact muffin-tin orbital density functional method in combination with the coherent-potential approximation and disordered local-magnetic-moment model. All impurities considered here enlarge or leave nearly constant the equilibrium volume of PM Fe but at the same time produce both positive and negative changes in the elastic parameters. Some of the alloying elements induce opposite effects on shear elastic parameters C' and C-44 of PM bcc and fcc Fe, which is discussed. With a few exceptions, we find that the alloying effects on PM bcc Fe are smaller than on PM fcc Fe. The trends in the tetragonal elastic constant C' show a general correlation with the trends obtained for the bcc-fcc lattice energy difference.
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| 20. |
- Zhang, Hualei, et al.
(author)
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Single-crystal elastic constants of ferromagnetic bcc Fe-based random alloys from first-principles theory
- 2010
-
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:18, s. 184105-
-
Journal article (peer-reviewed)abstract
- The elastic properties of ferromagnetic Fe1-xMx (M=Al, Si, V, Cr, Mn, Co, Ni, and Rh; 0 <= x <= 0.1) random alloys in the body-centered-cubic (bcc) crystallographic phase have been studied using the all-electron exact muffin-tin orbitals method in combination with the coherent-potential approximation. The theoretical lattice parameters and the single-crystal elastic constants agree well with the available experimental data. The most significant alloying effects are found for Al, Si, and Ni additions. All elements enlarge the lattice parameter and decrease the C-11, C-12, and C' elastic constants and the bulk modulus of bcc Fe. At the same time, C-44 is found to increase with Al, Si, V, Cr, or Mn and remain nearly constant with Co, Ni, and Rh. Accordingly, the elastic anisotropy of bcc Fe increases with all alloying elements considered here. The calculated alloying effects on the single-crystal elastic constants are shown to originate from volume effects in combination with the peculiar electronic structure of bcc Fe.
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