| 51. |
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| 52. |
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| 53. |
- Westbergh, Petter, 1981, et al.
(författare)
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High speed large aperture 850 nm VCSELs
- 2009
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Ingår i: International Nano-Optoelectronics Workshop (iNOW).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Error-free transmission over 50 m of OM3 fiber at 32 Gbit/s is demonstrated at a bias current density of 11 kA/cm2 using a large aperture 850 nm oxide-confined VCSEL optimized for high speed operation.
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| 54. |
- Westbergh, Petter, 1981, et al.
(författare)
-
High speed, low current density 850 nm VCSELs
- 2009
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 15:3, s. 694-703
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Tidskriftsartikel (refereegranskat)abstract
- We report on the design, fabrication, and evaluation of large-aperture, oxide-confined 850 nm vertical cavity surface emitting lasers (VCSELs) with high modulation bandwidth at low current densities. We also compare the use of InGaAs and GaAs quantum wells (QWs) in the active region. Both VCSELs reach an output power of 9 mW at room temperature, with a thermal resistance of 1.9deg C/mW. The use of InGaAs QWs improves the high-speed performance and enables a small-signal modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC. At a constant bias current density of only 11 kA/cm2, we generate open eyes under large-signal modulation at bit rates up to 25 Gbit/s at 85degC and 30 Gbit/s at 55degC.
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| 55. |
- Westbergh, Petter, 1981, et al.
(författare)
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Large aperture 850 nm VCSEL operating at 28 Gbit/s
- 2008
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Ingår i: Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International. - 9781424417827 ; , s. 7-8
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Konferensbidrag (refereegranskat)abstract
- We report on large aperture, oxide-confined VCSELs at 850 nm with modulation bandwidths in excess of 20 GHz and demonstrate large-signal modulation up to 28 Gbit/s at a bias current density of only 10 kA/cm2.
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| 56. |
- Westbergh, Petter, 1981, et al.
(författare)
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Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s
- 2008
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Ingår i: Electronics Letters. - 1350-911X .- 0013-5194. ; 44:15, s. 907-908
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Tidskriftsartikel (refereegranskat)abstract
- Small signal modulation bandwidths in excess of 20 GHz are demonstrated for a 9 μm oxide aperture VCSEL emitting at 850 nm. Open eye diagrams are obtained under large signal modulation at bit rates up to 25 Gbit/s with a bias current density of only 10 kA/cm2.
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| 57. |
- Westbergh, Petter, 1981, et al.
(författare)
-
Noise, distortion and dynamic range of single mode 1.3 µm InGaAs vertical cavity surface emitting lasers for radio-over-fibre links
- 2008
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Ingår i: IET Optoelectronics. - : Institution of Engineering and Technology (IET). - 1751-8768 .- 1751-8776. ; 2:2, s. 88-95
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Tidskriftsartikel (refereegranskat)abstract
- The analogue modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN) and spurious free dynamic range (SFDR), of single mode, GaAs-based 1.28 μm vertical cavity surface emitting laser (VCSELs) with highly strained InGaAs quantum wells have been investigated. The VCSELs utilise an oxide aperture for current and optical confinement and an inverted surface relief (SR) for suppression of higher order transverse modes. The inverted SR structure also has the advantage of suppressing oxide modes that, otherwise, appear in VCSELs with a large detuning of the cavity resonance with respect to the gain peak, which is needed to extend the emission wavelength. RIN levels comparable with those of single mode VCSELs emitting at 850 nm are demonstrated, with values from 140 to 150 dB/Hz in the 2 5 GHz range. SFDR values of 100 and 95 dBHz2/3 are obtained at 2 and 5 GHz, respectively. These values are in the range of those required in radio-over-fibre links.
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| 58. |
- Westbergh, Petter, 1981, et al.
(författare)
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Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications
- 2008
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Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE. ; 6997, s. 69970Y-1-8-
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Konferensbidrag (refereegranskat)abstract
- GaAs-based VCSELs emitting near 1.3 Όm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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| 59. |
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