| 1. |
- Hassona, Ahmed Adel, 1988, et al.
(författare)
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D-band waveguide-to-microstrip transition implemented in eWLB packaging technology
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:4, s. 187-
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Tidskriftsartikel (refereegranskat)abstract
- This Letter presents a non-galvanic D-band (110-170 GHz) interconnect realised in embedded wafer level ball grid array (eWLB) packaging technology. The interconnect consists of a patch-radiator-based waveguide transition implemented using one of the technology's redistribution layers. The patch radiates to a WR-6.5 standard waveguide perpendicular to its plane. An electromagnetic band-gap structure realised by metal patches is used to suppress undesired modes and improve the performance of the transition. The proposed solution is experimentally verified, and measurement results show that the transition exhibits an average insertion loss of 2 dB across the frequency range 122-146 GHz which, to the best of the authors' knowledge, is the lowest reported loss for a D-band packaging solution in eWLB technology and hence addresses one of the main integration challenges facing millimetre-wave systems.
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| 2. |
- Kanters, Noud, et al.
(författare)
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Stochastic array antenna figures-of-merit for quality-of-service-enhanced massive MIMO
- 2024
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Ingår i: Electronics Letters. - : WILEY. - 0013-5194 .- 1350-911X. ; 60:2
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Tidskriftsartikel (refereegranskat)abstract
- This paper shows that the signal-to-interference-plus-noise ratio (SINR) at a base station (BS) equipped with an arbitrary physical array antenna can be expressed as a function of two fundamental, stochastic figure of merits (FoMs): (I) the instantaneous effective gain (IEG) and (II) the beamforming-channel correlation (BCC). This result is achieved by applying a novel channel normalization approach using a reference array to preserve effects induced by the embedded element patterns of physical antenna elements. It is shown that both FoMs provide essential insights for quality-of-service (QoS)-based array antenna design by investigating their statistics for BSs applying full-digital (FD) zero forcing (ZF) beamforming. Various array designs are evaluated, and it is shown that arrays with higher IEGs and a reduced probability of low BCCs can increase the ergodic sum rate and reduce the need for scheduling. This paper shows that the signal-to-interference-plus-noise ratio at a base station equipped with an arbitrary physical array antenna can be expressed as a function of two fundamental figures-of-merit: (I) the instantaneous effective gain (IEG), and (II) the beamforming-channel correlation (BCC). Various array designs were evaluated and it is shown that arrays with higher IEGs and a reduced probability of low BCCs can increase the ergodic sum rate and reduce the need for scheduling.image
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| 3. |
- Kilpi, Olli-Pekka, et al.
(författare)
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Vertical nanowire III–V MOSFETs with improved high-frequency gain
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:13, s. 669-671
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Tidskriftsartikel (refereegranskat)abstract
- High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.
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| 4. |
- Kumar, A., et al.
(författare)
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Optimal frequency combination estimation for accurate ultrasound non-destructive testing
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 56:19, s. 1022-1024
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Tidskriftsartikel (refereegranskat)abstract
- A non-destructive testing system requires multiple system configuration parameters during the operation process. For a given transducer, scanning frequency and number of measurements for averaging are just among those parameters. This work tests the central limit theorem to optimally set these parameters. The authors have designed a compact ultrasound computer tomography scanner from scratch just to test this criterion. It is shown that optimal frequency value changes with respect to the scanning angle for an object with a heterogeneous inner profile. The proposed criterion helps to estimate the multi-spectral combination before the recovery stage minimum error. Possible industrial applications of such a system are 2D/3D multiphase flow profile recovery or crack detection in the composite matter, non-invasively.
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| 5. |
- Mitra, D., et al.
(författare)
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Radio frequency reliability studies of CMOS RF integrated circuits for ultra-thin flexible packages
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 56:6, s. 280-282
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Tidskriftsartikel (refereegranskat)abstract
- This Letter presents for the first time radio frequency (RF) reliability studies of fully integrated CMOS RF integrated circuits (RFICs) for next generation wireless communication applications involving conformal bodies where wireless communication RFICs will be embedded on ultra-thin flexible packages. As a test case, RF characteristics of a CMOS voltage-controlled oscillator (VCO) chip with multiple diesubstrate thicknesses were measured and results are analysed. The CMOS VCO chip under study was designed and fabricated using 180 nm RF-CMOS process. Reliability of performances of the VCO chips are characterised and results are compared before and after die thinning from 250 to 50, 35, and 25 μm, respectively. Critical RF performance parameters such as frequency of oscillation, output power, and phase noise are considered for analysis, respectively. All the dies are placed face-up for probing on the top of a metal chuck with ground connection inside the micro-chamber of a probe station. While the deviations of frequency and output power are within ±1% and ±1 dB, respectively, due to the die thinning affect, the phase noise deteriorations are observed significant. It confirms the wellknown fact of phase noise sensitiveness to the substrate thickness due to the leakage and SOI CMOS is discussed widely to minimise these parasitic effects.
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| 6. |
- Siddiqui, J.A., et al.
(författare)
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Efficient pulse compression favourable thermal excitation scheme for non-destructive testing using infrared thermography : a numerical study
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology. - 0013-5194 .- 1350-911X. ; 56:19, s. 1003-1005
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Tidskriftsartikel (refereegranskat)abstract
- Active thermal non-destructive testing (TNDT) has emerged as a swift, robust and cost-effective non-contact inspection method used to detect the surface and sub-surface defects present in a wide verity of solid materials. To further increase the efficacy of the process, various pulse-compression-based post-processing techniques are in use. However, the applicability of pulse compression-based thermographic methods has limited due to the presence of side lobes that degrades the energy concentration capabilities within the main lobe. In order to address this limitation, this work proposes a poly-phase code (P4-code). P4 codes are very efficient and robust in the reduction of distribution of energy in side lobes by concentrating on the main lobe. This Letter proposes a numerical study on the applicability of P4 codes-based pulse compression favourable thermal wave imaging approach for TNDT for testing and evaluation of steel specimen for identification of flat-bottom hole defects located at different depths. Further performance of the proposed method is compared with the widely used linear frequency modulated thermal wave imaging by considering the signal-to-noise ratio as a figure-of-merit.
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| 7. |
- Siddiqui, T. A., et al.
(författare)
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Bluetooth antenna for metal-cased smart jewellery
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:3, s. 115-117
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Tidskriftsartikel (refereegranskat)abstract
- This Letter presents a Bluetooth antenna for metal-cased smart jewellery. The designed antenna is competent enough to operate in free space; moreover, antenna performance is investigated with cubical shape model which has the electrical properties similar to human body tissue. The measured prototype achieves 68% total efficiency in the free space and 27% total efficiency when measured with a cubical model in the Bluetooth frequency range of 2.4-2.48 GHz.
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| 8. |
- Wang, Hairu, et al.
(författare)
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6G energy-efficient systems based on arrays combined with dielectric lenses
- 2023
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 59:17
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Tidskriftsartikel (refereegranskat)abstract
- It is demonstrated that combining phased array antennas with dielectric lenses constitutes a suitable solution to increase the energy efficiency in next-generation communication systems. A dielectric lens is designed to increase the gain of an array antenna working in the 3GPP n257 band (26.5–29.5 GHz). The simulated results demonstrate that the dielectric lens increases the gain between 0.4 and 1.3 dB in a large scanning range from 0° to 60° at 28 GHz; meaning that the output RF power can be decreased by up to 26% for a same equivalent isotropic radiated power required from the base station.
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| 9. |
- Yong, Wai Yan, et al.
(författare)
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Fully metallic frequency selective surface (FSS) circular polarizer based on cost-effective chemical etching manufacturing technique
- 2023
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Ingår i: Electronics Letters. - : WILEY. - 0013-5194 .- 1350-911X. ; 59:20
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a fully metallic circular polarizer based on a bandpass frequency selective surface (FSS) that converts linear polarization (LP) to circular polarization (CP) in the Ka-band. The proposed FSS circular polarizer consists of three cascaded identical perforated metal screens. The Jerusalem slot is used as the element of the FSS circular polarizer to produce an entirely metallic screen with a compact footprint. The Jerusalem slot allows the all-metallic design to be realized without mechanical issues. A 35 × 35 elements prototype has been designed and manufactured using a cost-effective chemical metallic etching technique, and performed measurements agree well with the numerical simulations. At broadside direction (θ=0∘$\theta =0^{\circ }$), the proposed polarizer operates from 27.5–30.1 GHz, while at the oblique angle of incidence θ=20∘$\theta =20^{\circ }$, the operating frequency is reduced to 27.7–29.4 GHz. The manufactured prototype has a low insertion loss (IL), i.e. ILmax≤1$\mathrm{IL}_{\text{max}} \le 1$ dB and a good axial ratio performance, i.e. AR ⩽ 2 dB at the desired operating frequency band. Thus, based on a cost-effective manufacturing technique, the proposed circular polarizer demonstrates an excellent approach to devising all-metallic FSS polarizers with good IL.
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| 10. |
- Rangasamy, Gautham, et al.
(författare)
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gm/Id Analysis of vertical nanowire III–V TFETs
- 2023
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Ingår i: Electronics Letters. - 1350-911X. ; 59:18
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Tidskriftsartikel (refereegranskat)abstract
- Experimental data on analog performance of gate-all-around III-V vertical Tunnel Field-Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 for current range of 9 nA/μm to 100 nA/μm and at a drain voltage of 100 mV. This TFET demonstrates translinearity between transconductance and drain current for over a decade of current, paving way for low power current-mode analog IC design. To explore this design principle, a current conveyor circuit is implemented, which exhibits large-signal voltage gain of 0.89 mV/mV, current gain of 1nA/nA and an operating frequency of 320 kHz. Furthermore, at higher drain bias of 500 mV, the device shows maximum transconductance of 72 μS/μm and maximum drain current of 26 μA/μm. The device, thereby, can be operated as a current mode device at lower bias voltage and as voltage mode device at higher bias voltage.
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