| 1. |
- Lapisa, Martin, et al.
(author)
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Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 17:3, s. 629-644
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Journal article (peer-reviewed)abstract
- Wafer-level heterogeneous integration technologies for microoptoelectromechanical systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical systems (NEMS) enable the combination of dissimilar classes of materials and components into single systems. Thus, high-performance materials and subsystems can be combined in ways that would otherwise not be possible, and thereby forming complex and highly integrated micro-or nanosystems. Examples include the integration of high-performance optical, electrical or mechanical materials such as monocrystalline silicon, graphene or III-V materials with integrated electronic circuits. In this paper the state-of-the-art of wafer-level heterogeneous integration technologies suitable for MOEMS, MEMS, and NEMS devices are reviewed. Various heterogeneous MOEMS, MEMS, and NEMS devices that have been described in literature are presented.
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| 2. |
- Larsson, Anders, 1957
(author)
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Advances in VCSELs for communication and sensing
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 17:6, s. 1552-1567
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Journal article (peer-reviewed)abstract
- The vertical cavity surface emitting laser (VCSEL) has become a light source of great importance for industrial and consumer applications. This includes communication and sensing in particular, where dynamics and optical mode behavior are key performance characteristics. This tutorial treats relevant VCSEL basics, performance requirements and recent progress towards higher speed, higher single mode power and polarization control.
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| 3. |
- Li, Qiang, et al.
(author)
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Experimental Demonstration of Plasmon Propagation, Coupling, and Splitting in Silver Nanowire at 1550-nm Wavelength
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 17:4, s. 1107-1111
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Journal article (peer-reviewed)abstract
- We experimentally demonstrate silver-nanowire-based plasmonic devices including the nanowaveguide, the nanocoupler, and the nanosplitter at optical communication wavelength of 1550 nm. The plasmon propagation loss in a 300-nm diameter silver nanowire is measured to be 0.3 dB/mu m and the effective propagation length is 14.5 mu m. This loss is comparatively lower than that at 980 nm. Two types of plasmonic functional devices based on the coupling between two silver nanowires, nanocouplers, and nanosplitters, are realized. For the nanocoupler, the experimental results show that the plasmonic modes can be efficiently coupled between two closely positioned nanowires. While for the nanosplitter, the plasmonic mode is split with a power ratio of 2.6:1. These demonstrations experimentally prove the feasibility of extending the operating wavelength of silver-nanowire-based plasmonic devices to current optical communication wavelength with a lower loss, which are thus important steps for potentially utilizing low-loss nanowire-based plasmonic components for photonic integrated circuits.
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| 4. |
- Li, Qiang, et al.
(author)
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Experimental demonstration of plasmon propagation, coupling, and splitting in silver nanowire at 1550-nm wavelength
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - : IEEE. - 1077-260X .- 1558-4542. ; 17:4, s. 1107-1111
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Journal article (peer-reviewed)abstract
- We experimentally demonstrate silver-nanowire-based plasmonic devices including the nanowaveguide, the nanocoupler, and the nanosplitter at optical communication wavelength of 1550 nm. The plasmon propagation loss in a 300-nm diameter silver nanowire is measured to be 0.3 dB/μm and the effective propagation length is 14.5 μm. This loss is comparatively lower than that at 980 nm. Two types of plasmonic functional devices based on the coupling between two silver nanowires, nanocouplers, and nanosplitters, are realized. For the nanocoupler, the experimental results show that the plasmonic modes can be efficiently coupled between two closely positioned nanowires. While for the nanosplitter, the plasmonic mode is split with a power ratio of 2.6:1. These demonstrations experimentally prove the feasibility of extending the operating wavelength of silver-nanowire-based plasmonic devices to current optical communication wavelength with a lower loss, which are thus important steps for potentially utilizing low-loss nanowire-based plasmonic components for photonic integrated circuits.
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| 5. |
- Park, Hyundai, et al.
(author)
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Device and Integration Technology for Silicon Photonic Transmitters
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 17:3, s. 671-688
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Journal article (peer-reviewed)abstract
- The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. Laser arrays from multiple die bonding and quantum well intermixing techniques are demonstrated to extend the spectral bandwidth from the laser array of the transmitter. Two modulator technologies, silicon modulators and hybrid silicon modulators, are also described.
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| 6. |
- Westbergh, Petter, 1981, et al.
(author)
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Impact of Photon Lifetime on High-Speed VCSEL Performance
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 17:6, s. 1603-1613
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Journal article (peer-reviewed)abstract
- We investigate the impact of reduced photon lifetime on the static and dynamic performance of high-speed, oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is reduced by a shallow-surface etch that lowers the reflectivity of the top mirror. From an analysis of the dependence of slope efficiency on mirror loss (etch depth) and temperature, we deduce values for the internal quantum efficiency and the internal optical loss and their dependencies on temperature. From an analysis of the dependence of the small-signal-modulation response on photon lifetime (etch depth) and temperature, we deduce values for differential gain and gain compression, and their dependencies on photon lifetime and temperature. We find a tradeoff between high resonance frequency and low damping for speed enhancement, leading to an optimum photon lifetime close to 3 ps for this particular VCSEL design that enables a modulation bandwidth of 23 GHz and error-free transmission at 40 Gb/s.
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| 7. |
- Borgström, Magnus, et al.
(author)
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Nanowires With Promise for Photovoltaics
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X. ; 17:4, s. 1050-1061
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Journal article (peer-reviewed)abstract
- Solar energy harvesting for electricity production is regarded as a fully credible future energy source: plentiful and without serious environmental concerns. The breakthrough for solar energy technology implementation has, however, been hampered by two issues: the conversion efficiency of light into electricity and the solar panel production cost. The use of III-V nanowires (NWs) in photovoltaics allows to respond to both these demands. They offer efficient light absorption and significant cost reduction. These low-dimensional structures can be grown epitaxially in dense NW arrays directly on silicon wafers, which are abundant and cheaper than the germanium substrates used for triple-junction solar cells today. For planar structures, lattice matching poses a strong restriction on growth. III-V NWs offer to create highly efficient multijunction devices, since multiple materials can be combined to match the solar spectrum without the need of tightly controlled lattice matching. At the same time, less material is required for NW-based solar cells than for planar-based architecture. This approach has potential to reach more than 50% in efficiency. Here, we describe our work on NW tandem solar cells, aiming toward two junctions absorbing different parts of the solar spectrum, connected in series via a tunnel diode.
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| 8. |
- Caroff, Philippe, et al.
(author)
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Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X. ; 17:4, s. 829-846
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Journal article (peer-reviewed)abstract
- III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.
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| 9. |
- Jagadish, Chennupati, et al.
(author)
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Introduction to the Issue on Nanowires
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X. ; 17:4, s. 763-765
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Journal article (other academic/artistic)
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| 10. |
- Nilsson, Henrik, et al.
(author)
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InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X. ; 17:4, s. 907-914
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Journal article (peer-reviewed)abstract
- The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single-and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO2 layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired transistor characteristics. The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires. For InSb nanowire quantum dots, both contact-induced Schottky-barrier-defined devices and top-finger-gate-defined devices are fabricated, and the Si substrate is used as a gate to tune the electron number in the quantum dots. The electrical measurements of these fabricated quantum-dot devices show the Coulomb-blockade effect at 4.2 K. A Fabry-Perot-like interference effect is also observed in a Schottky-barrier-defined quantum device. The authors also discuss in a comparative way, the results of measurements for the InSb nanowire devices made by different fabrication technologies employed in this study.
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