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- Lim, J.J., et al.
(författare)
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Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser
- 2008
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Ingår i: 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08; Nottingham; United Kingdom; 1 September 2008 through 4 September 2008. - 9781424423071 ; , s. 121-122
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Konferensbidrag (refereegranskat)abstract
- In this work, we optimise the structure of an uncooled directly modulated 1.3 μm GaInNAs ridge waveguide laser for high temperature operation. The static and dynamic performance of the optimised design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The optimised structure Is shown to have a lower threshold current, higher efficiency, higher modulation bandwidth and lower vertical beam divergence compared to a reference structure with a conventional design. Large-signal 10 Gbit/s digital modulation simulations were performed and demonstrate the improved performance of the optimised structure especially under high temperature operation.
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| 2. |
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| 3. |
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| 4. |
- Wang, Shu Min, 1963, et al.
(författare)
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High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs
- 2008
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819470843 ; 6909, s. 690905-
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Konferensbidrag (refereegranskat)abstract
- We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm 2 per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.
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| 6. |
- Westbergh, Petter, 1981, et al.
(författare)
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Large aperture 850 nm VCSEL operating at 28 Gbit/s
- 2008
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Ingår i: Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International. - 9781424417827 ; , s. 7-8
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Konferensbidrag (refereegranskat)abstract
- We report on large aperture, oxide-confined VCSELs at 850 nm with modulation bandwidths in excess of 20 GHz and demonstrate large-signal modulation up to 28 Gbit/s at a bias current density of only 10 kA/cm2.
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| 7. |
- Westbergh, Petter, 1981, et al.
(författare)
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Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications
- 2008
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Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE. ; 6997, s. 69970Y-1-8-
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Konferensbidrag (refereegranskat)abstract
- GaAs-based VCSELs emitting near 1.3 Όm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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