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Träfflista för sökning "(WFRF:(Harris C.)) srt2:(1995-1999)"

Sökning: (WFRF:(Harris C.)) > (1995-1999)

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  • Doyle, J. P., et al. (författare)
  • Characterization of deep level defects in 4H and 6H SiC via DLTS, SIMS and MeV e-beam irradiation
  • 1996
  • Ingår i: III-nitride, SiC and diamond materials for electronic devices. ; , s. 519-524
  • Konferensbidrag (refereegranskat)abstract
    • Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by VPE with doping concentrations, the epitaxial layer having a doping concentration in the range of 10 exp 14/cu cm to 10 exp 17/cu cm. Numerous levels have been found in the as-grown n-type 6H-SiC samples, and SIMS and MeV electron irradiation have been employed to correlate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.
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  • Zetterling, Carl-Mikael, et al. (författare)
  • UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide
  • 1999
  • Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 2:1, s. 23-27
  • Tidskriftsartikel (refereegranskat)abstract
    • MOS capacitors using wet thermal oxidation of p-type 4H and 6H silicon carbide have been investigated using capacitance-voltage (CV) measurements. The interface state density was determined from displacements in the CV curves at room temperature after optical generation of carriers. Forming gas annealing at 400 °C after metallization was found to reduce the amount of deep interface states, and in combination with UV-ozone precleaning of the SiC substrates in a commercial system, the fixed oxide charge was also reduced.
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  • Bertolotto, L, et al. (författare)
  • phi phi associated production in (p)over-bar-p annihilation from JETSET
  • 1996
  • Ingår i: PHYSICS OF ATOMIC NUCLEI. - : AMER INST PHYSICS. ; , s. 1444-1449
  • Konferensbidrag (refereegranskat)abstract
    • The JETSET (PS202) experiment at CERN has studied the reaction (p) over bar p --> 4K(+/-) in the invariant-mass range from 2.15 to 2.43 GeV/c(2). The phi phi, phi K+K-, and 4K(+/-) cross sections have been measured, and a spin-parity analysis of the phi p
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  • Buzzo, A, et al. (författare)
  • Search for narrow (p)over-bar-p resonances in the reaction (p)over-bar-p->(p)over-bar-p pi(+)pi(-)
  • 1997
  • Ingår i: ZEITSCHRIFT FUR PHYSIK C-PARTICLES AND FIELDS. - : SPRINGER VERLAG. - 0170-9739. ; 76:3, s. 475-478
  • Tidskriftsartikel (refereegranskat)abstract
    • The reaction (p) over bar p --> (p) over bar p pi(+)pi(-) has been studied with high statistics at CERN-LEAR with incident (p) over bar momenta from 1.65 to 2.0 GeV/c by the JETSET (PS202) experiment. The aim of this paper is to search for narrow resonanc
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