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- Johansson, Å. A., et al.
(författare)
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Intrinsic, n- and p-doped a-Si:H thin films grown by DC magnetron sputtering with doped targets
- 1999
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Ingår i: Materials Research Society Symposium Proceedings. - 0272-9172 .- 1946-4274. ; 557, s. 31-36
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Tidskriftsartikel (refereegranskat)abstract
- Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-Ha atmosphere giving H contents in the range of 3-20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B4C targets was also explored. The doping concentrations were 3 × 1020 - 2 × 1021 cm-3 for the p-type films and 2.6-2.9 × 1019cm-3 for the n-type films. The conductivity was in the range lO'MO"4 cm-1 for p-doped films and 10-5 Cl cm-1 for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.
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- Wang, Xin, et al.
(författare)
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Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering
- 1999
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 17:2, s. 564-570
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial (001) oriented SrTiO3 films have been deposited on LaAlO3(001) substrates by off-axis radio frequency magnetron sputtering in Ar:O-2 gas mixtures at substrate temperatures ranging from 650 to 850 degrees C. For the deposition conditions used, stoichiometric targets yielded 20% Sr-deficient films, whereas Sr-enriched targets (Sr1.1TiO0.9O3.0) resulted in stoichiometric films. The Sr-deficient films had a mosaic structure and a larger lattice parameter in comparison to bulk SrTiO3. The stoichiometric films on the other hand had a much higher crystalline quality in the as-deposited condition. The mosaicity of the latter films was primarily limited by the crystalline quality of the LaAlO3 substrates. The lattice parameters of the stoichiometric films were also smaller than the Sr-deficient ones and closer to the bulk value. The dielectric properties of the stoichiometric films were superior to the Sr-deficient films. For films with a thickness of similar to 300 nm, the typical dielectric constants as measured at similar to 77 K and I MHz were determined to be 820 and 500, for the stoichiometric and Sr-deficient films, respectively. Also the capacitance change, as a direct current bias voltage was applied to an interdigital capacitor, was higher for the stoichiometric film, 27.3% as compared to 8.6% when applying a bias of 300 V at 77 K. We also demonstrate the effectiveness of thermal annealing in improving both crystalline quality and dielectric properties, especially for the Sr-deficient films. (C) 1999 American Vacuum Society. [S0734-2101(99)010002-7].
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- Westerberg, Lars, et al.
(författare)
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Hydrogen content and outgassing of air-baked and vacuum-fired stainless steel
- 1997
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Ingår i: VACUUM. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X. ; 48:7-9, s. 771-773
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The hydrogen content of stainless steel samples, treated by 400 degrees C heat treatment for 2, 4, 8, 16 and 24 h in ambient air, was determined by the H-1(N-15,alpha gamma)C-12 nuclear resonance reaction, and a standard extraction method Two reference sa
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