Proximity effects of `unused' output buffers on ESD performance [CMOS]

• A unique failure mechanism, identified on an unused output buffer located near a used input protection device, occurs when excessive substrate current is generated during an electrostatic discharge (ESD) event. This new mechanism, the proximity effect, plays an important role when the n moat region of an input ESD circuit is within 20 μm of an unrelated n moat diffusion region contacted to the power supply, V cc. The operation of the most commonly used ESD input protection circuitry when stressed with respect to Vcc is reviewed. A laser cut experiment has verified that disconnecting the Vcc bus from the unused n moats eliminates this type of ESD failure. Device metal mask changes have confirmed these findings. This ESD failure mechanism, has been demonstrated on a variety of I/O buffer layouts, and a solution has been identified

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)

Nyckelord

Signalbehandling

Signal Processing

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)