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Träfflista för sökning "(WFRF:(Janzén Erik 1954 )) srt2:(2000-2004)"

Sökning: (WFRF:(Janzén Erik 1954 )) > (2000-2004)

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  • Chen, Weimin, 1959-, et al. (författare)
  • Magneto-optical spectroscopy of defects in wide bandgap semiconductors : GaN and SiC
  • 2000
  • Ingår i: Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices. - : IEEE. - 0780366980 ; , s. 497-502
  • Konferensbidrag (refereegranskat)abstract
    • We review recent progress in our understanding of intrinsic defects in GaN and SiC, gained from magneto-optical studies by Zeeman measurements and optically detected magnetic resonance. The two best-known intrinsic defects in these two wide bandgap semiconductors, i.e. the Ga interstitial in GaN and the silicon vacancy in SiC, are discussed in detail. The Ga interstitial is the first and only intrinsic defect in GaN that has so far been unambiguously identified, either in the presumably isolated form or in a family of up to three complexes. The silicon vacancy is among the most studied intrinsic defect in SiC, at least in two charge states, and yet still remains controversial.
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  • Jacobson, H., et al. (författare)
  • Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
  • 2004
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:3, s. 1485-1488
  • Tidskriftsartikel (refereegranskat)abstract
    • Different properties of the reported stacking faults (SFs) and that both these types of SF are present in the material after electrical degradation of pin diodes are shown. One is caused by perfect dislocations, deflected or misfit dislocation that had dissociated into two partial dislocations. The partials are assumed to be close to each other with a separation below the detection limit of the SWBT measurements. Thus, enough energy is provided and the leading partial moves away from the other partial and forms the extended SF.
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