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Numrering	Referens	Omslagsbild	Hitta
1.	Isoya, J., et al. (författare) Shallow P donors in 3C-, 4H- and 6H-SiC 2006 Ingår i: Materials Science Forum, Vols. 527-529. ; , s. 593- Konferensbidrag (refereegranskat)
2.	Nguyen, Son Tien, 1953-, et al. (författare) Divacancy in 4H-SiC 2006 Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 96:5, s. 055501-1-055501-4 Tidskriftsartikel (refereegranskat)abstract Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly on three nearest C neighbors of the silicon vacancy, whereas it is negligible on the nearest Si neighbors of the carbon vacancy.
3.	Nguyen, Son Tien, 1953-, et al. (författare) Divacancy model for P6/P7 centers in 4H- and 6H-SiC 2006 Ingår i: Materials Science Forum, Vols. 527-529. ; , s. 527-530 Konferensbidrag (refereegranskat)
4.	Umeda, T., et al. (författare) Electron paramagnetic resonance study of the HEI4/SI5 center in 4H-SiC 2006 Ingår i: Mater. Sci. Forum, Vol. 527-529. - : Trans Tech Publications Inc.. ; , s. 543- Konferensbidrag (refereegranskat)

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