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Sökning: (WFRF:(Kohler A)) srt2:(2000-2004) > (2003)

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1.
  • Kasic, A., et al. (författare)
  • Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry
  • 2003
  • Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 0:6 SPEC. ISS., s. 1750-1769
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • This work reviews recent ellipsometric investigations of the infrared dielectric functions of binary, ternary, and quaternary group-III nitride films. Spectroscopic Ellipsometry in the mid-infrared range is employed for the first time to determine phonon and free-carrier properties of individual group-III nitride heterostructure components, including layers of some ten nanometer thickness. Assuming the effective carrier mass, the free-carrier concentration and mobility parameters can be quantified upon model analysis of the infrared dielectric function. In combination with Hall-effect measurements, the effective carrier masses for wurtzite n- and p-type GaN and n-type InN are obtained. The mode behavior of both the E1(TO) and A1(LO) phonons are determined for ternary compounds. For strain-sensitive phonon modes, the composition and strain dependences of the phonon frequencies are differentiated and quantified. Information on the crystal quality and compositional homogeneity of the films can be extracted from the phonon mode broadening parameters. A comprehensive IR dielectric function database of group-III nitride materials has been established and can be used for the analysis of complex thin-film heterostructures designed for optoelectronic device applications. Information on concentration and mobility of free carriers, thickness, alloy composition, average strain state, and crystal quality of individual sample constituents can be derived. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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2.
  • Stierle, A, et al. (författare)
  • Surface core level shift observed on NiAl(110)
  • 2003
  • Ingår i: Surface Science. - 0039-6028. ; 529:3, s. 263-268
  • Tidskriftsartikel (refereegranskat)abstract
    • Using high resolution core level spectroscopy, a surface core level shift towards lower binding energy of -0.13 eV is determined for the 2p level of the outwardly relaxed Al surface atoms on NiAl(110). Density functional theory based calculations with inclusion of final state effects yield a value of -0.14 eV for this shift in excellent agreement with experiment. We show that the initial state approximation yields a value of +0.09 eV, i.e. the inclusion of final state relaxation effects is vital not only to obtain the correct value but even the correct sign for this shift. (C) 2003 Elsevier Science B.V. All rights reserved.
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