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  • Hong, J., et al. (author)
  • Plasma chemistries for high density plasma etching of SiC
  • 1999
  • In: Journal of Electronic Materials. - Charlottesville, VA, USA. - 0361-5235 .- 1543-186X. ; 28:3, s. 196-201
  • Journal article (peer-reviewed)abstract
    • A variety of different plasma chemistries, including SF6, Cl2, ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4500 angstroms·min-1 were obtained for SF6 plasmas, while much lower rates (≀800 angstroms·min-1) were achieved with Cl2, ICI, and IBr. The F2-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths ≥10 ÎŒm in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (<2,000 angstroms·min-1) for SiC.
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