| 1. |
- Millan, MJ, et al.
(författare)
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S33138 [N-[4-[2-[(3aS,9bR)-8-cyano-1,3a,4,9b-tetrahydro[1]-benzopyrano[3,4-c]pyrrol-2(3H)-yl)-ethyl]phenylacetamide], a preferential dopamine D3 versus D2 receptor antagonist and potential antipsychotic agent. II. A neurochemical, electrophysiological and behavioral characterization in vivo
- 2008
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Ingår i: The Journal of pharmacology and experimental therapeutics. - : American Society for Pharmacology & Experimental Therapeutics (ASPET). - 1521-0103 .- 0022-3565. ; 324:2, s. 600-611
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Tidskriftsartikel (refereegranskat)
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| 2. |
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| 3. |
- Kessler, Richard, et al.
(författare)
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First-Year Sloan Digital Sky Survey-II Supernova Results : Hubble Diagram and Cosmological Parameters
- 2009
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Ingår i: Astrophysical Journal Supplement Series. - : American Astronomical Society. - 0067-0049 .- 1538-4365. ; 185:1, s. 32-84
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Tidskriftsartikel (refereegranskat)abstract
- We present measurements of the Hubble diagram for 103 Type Ia supernovae (SNe) with redshifts 0.04 < z < 0.42, discovered during the first season (Fall 2005) of the Sloan Digital Sky Survey-II (SDSS-II) Supernova Survey. These data fill in the redshift "desert" between low- and high-redshift SN Ia surveys. Within the framework of the MLCS2K2 light-curve fitting method, we use the SDSS-II SN sample to infer the mean reddening parameter for host galaxies, RV = 2.18 ± 0.14stat ± 0.48syst, and find that the intrinsic distribution of host-galaxy extinction is well fitted by an exponential function, P(AV ) = exp(-AV /τV), with τV = 0.334 ± 0.088 mag. We combine the SDSS-II measurements with new distance estimates for published SN data from the ESSENCE survey, the Supernova Legacy Survey (SNLS), the Hubble Space Telescope (HST), and a compilation of Nearby SN Ia measurements. A new feature in our analysis is the use of detailed Monte Carlo simulations of all surveys to account for selection biases, including those from spectroscopic targeting. Combining the SN Hubble diagram with measurements of baryon acoustic oscillations from the SDSS Luminous Red Galaxy sample and with cosmic microwave background temperature anisotropy measurements from the Wilkinson Microwave Anisotropy Probe, we estimate the cosmological parameters w and ΩM, assuming a spatially flat cosmological model (FwCDM) with constant dark energy equation of state parameter, w. We also consider constraints upon ΩM and ΩΛ for a cosmological constant model (ΛCDM) with w = -1 and non-zero spatial curvature. For the FwCDM model and the combined sample of 288 SNe Ia, we find w = -0.76 ± 0.07(stat) ± 0.11(syst), ΩM = 0.307 ± 0.019(stat) ± 0.023(syst) using MLCS2K2 and w = -0.96 ± 0.06(stat) ± 0.12(syst), ΩM = 0.265 ± 0.016(stat) ± 0.025(syst) using the SALT-II fitter. We trace the discrepancy between these results to a difference in the rest-frame UV model combined with a different luminosity correction from color variations; these differences mostly affect the distance estimates for the SNLS and HST SNe. We present detailed discussions of systematic errors for both light-curve methods and find that they both show data-model discrepancies in rest-frame U band. For the SALT-II approach, we also see strong evidence for redshift-dependence of the color-luminosity parameter (β). Restricting the analysis to the 136 SNe Ia in the Nearby+SDSS-II samples, we find much better agreement between the two analysis methods but with larger uncertainties: w = -0.92 ± 0.13(stat)+0.10 -0.33(syst) for MLCS2K2 and w = -0.92 ± 0.11(stat)+0.07 -0.15 (syst) for SALT-II.
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| 4. |
- Brosselard, P, et al.
(författare)
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Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
- 2008
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Ingår i: IET Seminar Digest, Volume 2008, Issue 2, 2008. - : IEE. - 9788001041390 ; , s. 87-91
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Konferensbidrag (refereegranskat)abstract
- Silicon Carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3kV. Diodes have been packaged and measured up to 300°C. The Schottky diode shows an increase of voltage drop with temperature and a reverse recovery charge independent from temperature. The PiN diode reverse recovery charge is ×20 at 300°C compared to that of the Schottky diode. 55% of the stressed bipolar diodes at 20A show a very small forward voltage drift. Theswitching losses of these stressed diodes are reduced by 20%. Substrate quality enhancement makes large SiC component fabrication possible (25mm 2 Schottky diodes) and bipolar components show very small tension drift with temperature.
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| 5. |
- Brosselard, P, et al.
(författare)
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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
- 2007
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Ingår i: Proceedings of the International Symposium on Power Semiconductor Devices and ICs. ; , s. 285-288
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Konferensbidrag (refereegranskat)abstract
- 4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N + substrate using a JTE as edge termination. A breakdown voltage higherthan 3.5 kV has been measured on 0.16 and 2.56 mm 2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm 2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300°C.
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| 6. |
- Brosselard, P, et al.
(författare)
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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
- 2009
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Ingår i: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 24:9, s. 095004-
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Tidskriftsartikel (refereegranskat)abstract
- 4H-SiC PIN diodes have been fabricated on a Norstel P+/N/N+ substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 4.5 kV has been measured at 1 mu A for devices with an active area of 2.6 mm(2). The differential on-resistance at 15 A (600 A cm(-2)) was of only 1.7 m Omega cm(2) (25 degrees C) and 1.9 m Omega cm(2) at 300 degrees C. The reduced recovery charge was of 300 nC for a switched current of 15 A (500 V) at 300 degrees C. 20% of the diodes showed no degradation at all after 60 h of dc stress (25-225 degrees C). Other 30% of the diodes exhibit a reduced voltage shift below 1 V. For those diodes, the leakage current remains unaffected after the dc stress. Electroluminescence investigations reveal a very low density of stacking faults after the dc stress. The manufacturing yield evidences the efficiency of the substrate surface preparation and our technological process.
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| 7. |
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| 8. |
- Campistol, Josep M, et al.
(författare)
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Practical recommendations for the early use of m-TOR inhibitors (sirolimus) in renal transplantation.
- 2009
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Ingår i: Transplant international : official journal of the European Society for Organ Transplantation. - : Frontiers Media SA. - 1432-2277. ; 22:7, s. 681-7
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Tidskriftsartikel (refereegranskat)abstract
- m-TOR inhibitors (e.g. sirolimus) are well-tolerated immunosuppressants used in renal transplantation for prophylaxis of organ rejection, and are associated with long-term graft survival. Early use of sirolimus is often advocated by clinicians, but this may be associated with a number of side-effects including impaired wound-healing, lymphoceles and delayed graft function. As transplant clinicians with experience in the use of sirolimus, we believe such side-effects can be limited by tailored clinical management. We present recommendations based on published literature and our clinical experience. Furthermore, guidance is provided on sirolimus use during surgery, both at transplantation and for subsequent operations.
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