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- Persson, Per, et al.
(författare)
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On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:5, s. 2501-2505
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Tidskriftsartikel (refereegranskat)abstract
- Transmission electron microscopy was used to investigate B-11, C-12, N-14, Al-27, Si-28, and Ar-37 ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic dislocation loops of interstitial type are formed on the SiC basal plane with a depth distribution roughly corresponding to the distribution of the implanted ions. The investigation reveals that in samples where the implanted ions are substituting for a position in the silicon sublattice, generating an excess of interstitial silicon, the dislocation loops are more readily formed than in a sample implanted with an ion substituting for carbon.
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