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Sökning: (WFRF:(Panknin S.)) > (2001-2004)

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1.
  • Osterman, J, et al. (författare)
  • Techniques for depth profiling of dopants in 4H-SiC
  • 2001
  • Ingår i: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000. ; , s. 559-562
  • Konferensbidrag (refereegranskat)abstract
    • Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.
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2.
  • Persson, Per, et al. (författare)
  • On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
  • 2002
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:5, s. 2501-2505
  • Tidskriftsartikel (refereegranskat)abstract
    • Transmission electron microscopy was used to investigate B-11, C-12, N-14, Al-27, Si-28, and Ar-37 ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic dislocation loops of interstitial type are formed on the SiC basal plane with a depth distribution roughly corresponding to the distribution of the implanted ions. The investigation reveals that in samples where the implanted ions are substituting for a position in the silicon sublattice, generating an excess of interstitial silicon, the dislocation loops are more readily formed than in a sample implanted with an ion substituting for carbon.
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