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- Schnadt, J., Schiessling, J., O'Shea, J.N., Gray, S.M., Patthey, L., Johansson, M.K.J., Shi, M., Krepansky, J., Åhlund, J., Karlsson, P.G., Persson, P., Mårtensson, N., and Brühwiler, P.A.
(författare)
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Structural study of adsorption of isonicotinic acid and related molecules on rutile TiO2(110). I: XAS and STM
- 2003
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Ingår i: Surface Science. ; 540, s. 39-
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Tidskriftsartikel (refereegranskat)
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| 2. |
- Zhou, J., et al.
(författare)
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Self-excited piezoelectric microcantilever for gas detection
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 69:1, s. 37-46
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Tidskriftsartikel (refereegranskat)abstract
- Design, fabrication and results from theoretical and experimental studies on the self-excited piezoelectric microcantilever are presented in this paper. Theoretical studies have been carried out to design the microcantilever and have been extended to harmonic analysis using the finite element technique. Silicon microfabrication has been successfully completed to create microcantilever devices. Experimental studies have been performed to obtain the resonance frequencies. Applied as a mass-sensitive sensor, the microcantilever has a sensitivity of - 0.0024%/ppm and a minimum mass loading of 3.5 x 10(-9) g with the help of a zeolite sensitive layer to freon.
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| 5. |
- Andersson, J. O., et al.
(författare)
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THERMO-CALC & DICTRA, computational tools for materials science
- 2002
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Ingår i: Calphad. - 0364-5916 .- 1873-2984. ; 26:2, s. 273-312
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Tidskriftsartikel (refereegranskat)abstract
- Software for calculation of phase diagrams and thermodynamic properties have been developed since the 1970's. Software and computers have now developed to a level where such calculations can be used as tools for material and process development. In the present paper some of the latest software developments at Thermo-Calc Software are presented together with application examples. It is shown how advanced thermodynamic calculations have become more accessible since: - A more user-friendly windows version of Thermo-Calc, TCW, has been developed. - There is an increasing amount of thermodynamic databases for different materials available. - Thermo-Calc can be accessed from user-written software through several different programming interfaces are available which enables access to the thermodynamic software from a user-written software. Accurate data for thermodynamic properties and phase equilibria can then easily be incorporated into software written in e.g. C++, Matlab and FORTRAN. Thermo-Calc Software also produces DICTRA, a software for simulation of diffusion controlled phase transformations. Using DICTRA it is possible to simulate processes such as homogenization, carburising, microsegregation and coarsening in multicomponent alloys. The different models in the DICTRA software are briefly presented in the present paper together with some application examples.
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| 6. |
- d'Heurle, F. M., et al.
(författare)
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Formation of C54TiSi(2) : Effects of niobium additions on the apparent activation energy
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:12, s. 6409-6415
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Tidskriftsartikel (refereegranskat)abstract
- The formation of C54 TiSi2 using Ti-Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Alloys with Nb contents ranging from 0 to 13.6 at. % were used. The formation temperature of C54 TiSi2 was reduced in the presence of Nb. However, the addition of Nb in Ti did not cause fundamental changes in the evolution of resistance versus temperature. This latter observation suggests that the mechanism for the formation of C54 TiSi2 remained the same in spite of the enhancement effect. For alloys with up to 8 at. % of Nb, the C49 TiSi2 phase formed first, as with pure Ti. When annealing the alloy with 13.6 at. % Nb, neither C49 TiSi2 nor C54 were found in the usual temperature ranges, instead, C40 (Nb,Ti)Si-2 was observed. This phase transformed to C54 (Nb,Ti)Si-2 above 950 degreesC. The apparent activation energy associated with the formation of C54 TiSi2 was obtained by annealing the samples at four different ramp rates from 3 to 27 K/s; it decreased continuously from 3.8 to 2.5 eV with increasing Nb content from 0 to 8 at. %. The apparent activation energy for the formation of C40 (Nb,Ti)Si-2 was found to be 2.6 eV. The possible physical meaning, or lack thereof, of the high activation energies derived from experimental measurements is extensively discussed. A qualitative model is proposed whereby nucleation would be rate controlling in pure TiSi2, and interface motion in samples with 8 at. % Nb.
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| 7. |
- J. Schnadt, J. N. O`Shea, L. Patthey, J. Schiessling, M. Shi, J. Krempasky, J. Åhlund, N. Mårtensson, and P. A, Brühwiler
(författare)
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Structural study of adsorption of isonicotinic acid and related molecules on rutile TiO2(110) II.: XPS
- 2003
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Ingår i: Surf. Sci.. ; :544, s. 74-
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Tidskriftsartikel (refereegranskat)
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| 8. |
- Ma, P. X., et al.
(författare)
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An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions
- 2001
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 45:1, s. 159-167
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Tidskriftsartikel (refereegranskat)abstract
- An analytical model is presented For quasi-static capacitance of the space-charge region in a p-n junction. The model is valid for realistic junction doping profiles under any bias conditions. It consists of local models in three bias regions. For the high-reverse bias region, a novel analytical model is derived. For the moderate-bias region, an empirical model commonly used in SPICE is adopted. Finally, for the high-forward bias region, the junction profiles are approximated by linearly-graded junctions. Existing analytical models are then modified appropriately to characterize both high-injection and heavy-doping effects for advanced bipolar transistors. Compared to previously developed analytical models or existing empirical models, as well as numerical simulation results, the analytical model presented here shows an improved accuracy and therefore provides a better tool For both device and circuit simulations.
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