1. |
- Abdallah, J, et al.
(författare)
-
Rapidity-alignment and p(T) compensation of particle pairs in hadronic Z(0) decays
- 2002
-
Ingår i: Physics Letters. Section B: Nuclear, Elementary Particle and High-Energy Physics. - 0370-2693. ; 533:3-4, s. 243-252
-
Tidskriftsartikel (refereegranskat)abstract
- Observation is made of rapidity-alignment of K+K- and (p) over barp pairs which results from their asymmetric orientation in rapidity, with respect to the direction from primary quark to antiquark. The K+K- and (p) over barp data are consistent with predictions from the fragmentation string model. However, the (p) over barp data strongly disagree with the conventional implementation of the cluster model. The non-perturbative process of 'gluon splitting to diquarks' has to be incorporated into the cluster model for it to agree with the data. Local conservation of PT between particles nearby in rapidity (i.e., p(T) compensation) is analysed with respect to the thrust direction for pi(+)pi(-), K+K-, and (p) over barp pairs. In this case, the string model provides fair agreement with the data. The cluster model is incompatible with the data for all three particle pairs. The model with its central premiss of isotropically-decaying clusters predicts a p(T) correlation not seen in the data. (C) 2002 Elsevier Science B.V. All rights reserved.
|
|
2. |
- Abdallah, J, et al.
(författare)
-
Search for charged Higgs bosons in e(+)e(-) collisions root s=189-202 GeV
- 2002
-
Ingår i: Physics Letters. Section B: Nuclear, Elementary Particle and High-Energy Physics. - 0370-2693. ; 525:1-2, s. 17-28
-
Tidskriftsartikel (refereegranskat)abstract
- A search for pair-produced charged Higgs bosons was performed in the high energy data collected by the DELPHI detector at LEP II at centre-of-mass energies from 189 GeV to 202 GeV. The three different final states, taunutaunu, c (s) over bar(c) over bars and c (s) over bar taunu were considered. New methods were applied to reject wrong hadronic jet pairings and for the tau identification, where a discriminator based on tau polarisation and polar angles was used. No excess of data compared to the expected Standard Model processes was observed and the existence of a charged Higgs boson with mass lower than 71.5 GeV/c(2) is excluded at the 95% confidence level. (C) 2002 Published by Elsevier Science B.V.
|
|
3. |
- Abdallah, J, et al.
(författare)
-
Searches for neutral Higgs bosons in e(+)e(-), collisions from root s=191.6 to 201.7 GeV
- 2002
-
Ingår i: European Physical Journal C. Particles and Fields. - : Springer Science and Business Media LLC. - 1434-6044. ; 23:3, s. 409-435
-
Tidskriftsartikel (refereegranskat)abstract
- Neutral Higgs bosons of the Standard Model (SM) and the Minimal Supersymmetric Standard Model (MSSM) were searched for in the data collected in 1999 by the DELPHI experiment at centre-of-mass energies between 191.6 and 201.7 GeV with a total integrated luminosity of 228 pb(-1). These analyses, in combination with our results at lower energies, set 95% confidence level lower mass bounds on the Standard Model Higgs boson (107.3 GeV/c(2)) and on the lightest neutral scalar (85.9 GeV/c(2)) and neutral pseudoscalar (86.5 GeV/c(2)) Higgs bosons in representative scans of the MSSM parameter space. An extended scan of the MSSM parameter space was also performed to test the robustness of these limits.
|
|
4. |
- Ahuja, Rajeev, et al.
(författare)
-
Electronic and optical properties of lead iodide
- 2002
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7219-7224
-
Tidskriftsartikel (refereegranskat)abstract
- The electronic properties and the optical absorption of lead iodide (PbI2) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
|
|
5. |
- Ahuja, Rajeev, et al.
(författare)
-
Optical properties of 4H-SiC
- 2002
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2099-2103
-
Tidskriftsartikel (refereegranskat)abstract
- The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies.
|
|
6. |
- Ahuja, R., et al.
(författare)
-
Optical properties of 4H-SiC
- 2002
-
Ingår i: J. Appl. Phys.. ; 91:4, s. 2099-2103
-
Tidskriftsartikel (refereegranskat)
|
|
7. |
- Araujo, C. M., et al.
(författare)
-
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si
- 2002
-
Ingår i: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
-
Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.
|
|
8. |
- de Oliveira, A. C., et al.
(författare)
-
Spectroscopy studies of 4H-SiC
- 2002
-
Ingår i: Materials Research. ; 6, s. 43-
-
Tidskriftsartikel (refereegranskat)
|
|
9. |
- Persson, Clas, et al.
(författare)
-
Optical and reduced band gap in n- and p-type GaN and AlN
- 2002
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:6, s. 3207-3216
-
Tidskriftsartikel (refereegranskat)abstract
- We present a full band calculation of the doping-induced energy shifts of the conduction-band minimum and the valence-band maximum for n- and p-type GaN and AlN. Both wurtzite and zinc-blende structures have been considered. The resulting optical and reduced band-gap energies are presented as functions of the ionized impurity concentration in the heavily doped regime. The computational method is based on a zero-temperature Green's function formalism within the random phase approximation and with the local-field correction of Hubbard. The calculation goes beyond the spherical approximation of the energy bands by using energy dispersions and overlap integrals from a first-principle, full-potential band-structure calculation. Inclusion of the spin-orbit interaction is crucial for describing the uppermost valence bands properly, and we show that the nonparabolicity of the valence bands influences the energy shifts strongly, especially the shift of the optical band gap. With the full band structure, we can explain the results of photoluminescence measurements by Yoshikawa [J. Appl. Phys. 86, 4400 (1999)].
|
|