| 1. |
- O´brien, Nathan, et al.
(författare)
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In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
- 2020
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Ingår i: Chemistry of Materials. - : AMER CHEMICAL SOC. - 0897-4756 .- 1520-5002. ; 32:11, s. 4481-4489
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Tidskriftsartikel (refereegranskat)abstract
- Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new In(III) precursor, the first example of a homoleptic triazenide used in a vapor deposition process, was easily synthesized and purified by sublimation. Thermogravimetric analysis showed single step volatilization with an onset temperature of 145 degrees C and negligible residual mass. Strikingly, two temperature intervals with self-limiting growth were observed when depositing InN films. In the high-temperature interval, the precursor underwent a gas-phase thermal decomposition inside the ALD reaction chamber to produce a more reactive In(III) compound while retaining self-limiting growth behavior. Density functional theory calculations revealed a unique two-step decomposition process, which liberates three molecules of each propene and N-2 to give a smaller tricoordinated In(III) species. Stoichiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. The InN films deposited at 325 degrees C had a sheet resistivity of 920 Omega/sq. This new triazenide precursor enables ALD of InN for semiconductor applications and provides a new family of M-N bonded precursors for future deposition processes.
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| 2. |
- Rodriguez-Iruretagoiena, Azibar, et al.
(författare)
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A new procedure to quantify silver nanoparticles in sediments
- 2022
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Ingår i: Gondwana Research. - : Elsevier BV. - 1342-937X .- 1878-0571. ; 110, s. 264-269
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Tidskriftsartikel (refereegranskat)abstract
- Silver nanoparticles (AgNPs) are highly produced in developed countries for a variety of products. Consequently, AgNPs end up being introduced in aquatic systems all over the world, and usually deposited in riverine sediments, from where they can be taken up by aquatic organisms and transferred along the food chain. The analysis of AgNPs in natural samples is not an easy task, because of their low presence and complicated reactions, which can change their speciation. The objective of this work is to help in this challenge, developing a method applicable to analyse sediment samples from any place around the world where AgNPs are suspected to be present. Firstly, four methods for the synthesis of AgNPs were investigated by Ultraviolet-visible (UV-VIS) spectroscopy and particle size analysis. The methods differed in the reducing agent used and in the concentration of the stabilising agent applied. The method including NaBH4 and SDS (sodium dodecyl sulphate) resulted to be more adequate as the Surface Plasmon Resonance (SPR) band position and width indicated. This conclusion was corroborated considering the hydrodynamic diameters and polydispersity indices of the synthesised AgNPs. The Z-average hydrodynamic diameter and the UV-VIS spectrum of AgNPs synthesised using this method indicated that the AgNPs remained kinetically stable for at least 10 days. Finally, ten potential extraction solutions were investigated, in terms of maximal extraction efficiency, but minimal effects on AgNP dissolution and aggregation. The candidate solutions ranged from deionized water and salts to strong acids and bases. The intensity of the SPR band concluded that using NaOH media the synthesised AgNPs was kinetically stable. Moreover, TEM (Transmission Electron Microscopy) images showed that the AgNPs in NaOH retained their shape and size after 10 days. Therefore, NaOH media turned out to be the best potential extractant for the analysis of sediment samples.
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| 3. |
- Rouf, Polla, et al.
(författare)
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Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition
- 2021
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Ingår i: Chemistry of Materials. - : AMER CHEMICAL SOC. - 0897-4756 .- 1520-5002. ; 33:9, s. 3266-3275
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Tidskriftsartikel (refereegranskat)abstract
- Gallium nitride (GaN) is the main component of modern-day high electron mobility transistors due to its favorable electronic properties. As electronic devices become smaller with more complex surface architecture, the ability to deposit high-quality GaN films at low temperatures is required. Herein, we report a new highly volatile Ga(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial GaN by atomic layer deposition (ALD). This new Ga(III) triazenide, the first hexacoordinated Ga-N bonded precursor used in a vapor deposition process, was easily synthesized and purified by either sublimation or recrystallisation. Thermogravimetric analysis showed single-step volatilization with an onset temperature of 155 degrees C and negligible residual mass. Three temperature intervals with self-limiting growth were observed when depositing GaN films. The GaN films grown in the second growth interval at 350 degrees C were epitaxial on 4H-SiC without an AlN seed layer and found to have a near stoichiometric Ga/N ratio with very low levels of impurities. In addition, electron microstructure analysis showed a smooth film surface and a sharp interface between the substrate and film. The band gap of these films was 3.41 eV with the Fermi level at 1.90 eV, showing that the GaN films were unintentionally n-type-doped. This new triazenide precursor enables ALD of GaN for semiconductor applications and provides a new Ga(III) precursor for future deposition processes.
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