| 1. |
- Baveja, Prashant, 1985, et al.
(författare)
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Impact of device parameters on thermal performance of high speed oxide confined 850 nm VCSELs
- 2012
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 48:1, s. 17-26
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Tidskriftsartikel (refereegranskat)abstract
- We study the impact of device parameters, such asinner-aperture diameter and cavity photon lifetime, on thermal rollover mechanisms in 850-nm, oxide-confined, vertical-cavity surface-emitting lasers (VCSELs) designed for high-speed operation. We perform measurements on four different VCSELs of different designs and use our empirical thermal model for calculating the power dissipated with increasing bias currents through various physical processes such as absorption within the cavity, carrier thermalization, carrier leakage, spontaneous carrier recombination, and Joule heating. When reducing the topmirror reflectivity to reduce internal optical absorption loss we find an increase of power dissipation due to carrier leakage. There is therefore a trade-ff between the powers dissipated owing to optical absorption and carrier leakage in the sense that overcompensating for optical absorption enhances carrier leakage (and vice versa). We further find that carrier leakage places the ultimate limit on the thermal performance for this entire class ofdevices. Our analysis yields useful design optimization strategies for mitigating the impact of carrier leakage and should thereby prove useful for the performance enhancement of 850-nm, highspeed, oxide-confined VCSELs.
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| 2. |
- Baveja, P. P., et al.
(författare)
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Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276
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Konferensbidrag (refereegranskat)abstract
- We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them.
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| 3. |
- Davani, Hooman A., et al.
(författare)
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Polarization investigation of a tunable high-speed short-wavelength bulk-micromachined MEMS-VCSEL
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Art. no. 82760T-
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Konferensbidrag (refereegranskat)abstract
- We report the investigation of the state of polarization (SOP) of a tunable vertical-cavity surface-emitting laser (VCSEL) operating near 850 nm with a mode-hop free single-mode tuning range of about 12 nm and an amplitude modulation bandwidth of about 5 GHz. In addition, the effect of a sub-wavelength grating on the device and its influence on the polarization stability and polarization switching has been investigated. The VCSEL with an integrated sub-wavelength grating shows a stable SOP with a polarization mode suppression ratio (PMSR) more than 35 dB during the tuning.
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| 4. |
- Haglund, Erik, 1985, et al.
(författare)
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25 Gbit/s transmission over 500 m multimode fibre using 850 nm VCSEL with integrated mode filter
- 2012
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 48:9, s. 517-518
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Tidskriftsartikel (refereegranskat)abstract
- An integrated mode filter in the form of a shallow surface relief was used to reduce the spectral width of a high-speed 850 nm vertical-cavity surface-emitting laser (VCSEL). The mode filter reduced the RMS spectral width from 0.9 to 0.3 nm for a VCSEL with an oxide aperture as large as 5 mu m. Because of reduced effects of chromatic and modal fibre dispersion, the mode filter significantly increases the maximum error-free (bit error rate
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| 5. |
- Haglund, Erik, 1985, et al.
(författare)
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High-speed lasers for optical interconnects
- 2012
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Ingår i: Swedish Optics and Photonics Days 2012.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- In the era of cloud computing, with services such as video streaming, social networking, and online storage and file sharing, the demand for online data processing and storage capacity is growing rapidly. These services are hosted in huge data centers that need not only fast servers but also fast communication between servers. Because copper cables have high attenuation at high frequencies, the most promising solution is to use fiber optical links (called optical interconnects) to connect different parts of the data center. Today, gallium arsenide-based vertical-cavity surface-emitting lasers (VCSELs) emitting at 850 nm are the standard light source in transmitters used in commercially available optical interconnects, operating at up to 14 Gbit/s with a link length of up to 300 m. These lasers have the advantages of low power consumption, fast direct modulation at low currents, and low-cost manufacturing. To keep up with the demand of increasing optical interconnect capacity, the Photonics Laboratory at Chalmers university of Technology is conducting research into improving the speed, reach and capacity of VCSELs for optical interconnects.
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| 6. |
- Haglund, Erik, 1985, et al.
(författare)
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Mode-filtered semiconductor lasers enable longer-reach optical interconnects
- 2012
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Ingår i: SPIE Newsroom. - : SPIE-Intl Soc Optical Eng. - 1818-2259.
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- An integrated mode filter significantly decreases the spectral width of conventional short-wavelength vertical-cavity surface-emitting lasers, promising longer optical interconnects for future data centers.
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| 7. |
- Haglund, Erik, 1985, et al.
(författare)
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Reducing the spectral width of high speed oxide confined VCSELs using an integrated mode filter
- 2012
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760L-
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Konferensbidrag (refereegranskat)abstract
- We have reduced the spectral width of high speed oxide confined 850 nm VCSELs using a shallow surface relief for suppression of higher order transverse modes. The surface relief acts as a mode filter by introducing a spatially varying and therefore mode selective loss. The VCSEL employs multiple oxide layers for reduced capacitance which leads to a strong index guiding and a large spectral width in the absence of a mode filter. With an appropriate choice of surface relief parameters, the RMS spectral width for a 5 jam oxide aperture VCSEL is reduced from 0.6 to 0.3 nm. The small signal modulation bandwidth is 19 GHz. Due to reduced effects of chromatic and modal fiber dispersion, the maximum error-free (bit-error-rate
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| 8. |
- Kögel, Benjamin, 1979, et al.
(författare)
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Integrated MEMS-tunable VCSELs for reconfigurable optical interconnects
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760Q-
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Konferensbidrag (refereegranskat)abstract
- A simple and low-cost technology for tunable vertical-cavity surface-emitting lasers (VCSELs) with curved movable micromirror is presented. The micro-electro-mechanical system (MEMS) is integrated with the active optical component (so-called half-VCSEL) by means of surface-micromachining, using a reflown photoresist droplet as sacrificial layer. The technology is demonstrated for electrically pumped, short-wavelength (850nm) tunable VCSEts. Fabricated devices with 10 mu m oxide aperture are singlemode with sidemode suppression >35 dB, tunable over 24 mit with output power up to 0.5 mW, and have a beam divergence angle
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| 9. |
- Kögel, Benjamin, 1979, et al.
(författare)
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Integrated MEMS-Tunable VCSELs Using a Self-Aligned Reflow Process
- 2012
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 48:2, s. 144-152
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Tidskriftsartikel (refereegranskat)abstract
- A simple microelectromechanical systems technology for wafer-scale integration of tunable vertical-cavity surface-emitting lasers (VCSELs) is presented. The key element is a self-aligned reflow process to form photoresist droplets, which serve as sacrificial layer and preform for a curved micromirror. Using a 3-D electromagnetic model, the half-symmetric cavity is optimized for singlemode emission. The technology is demonstrated for electrically pumped, short-wavelength (850 nm) tunable VCSELs, but is transferable to other wavelengths and material systems. Fabricated devices with 10 mu m large current aperture are singlemode and tunable over 24 nm. An improved high-speed design with reduced parasitic capacitance enables direct modulation with 3dB-bandwidths up to 6 GHz and data transmission at 5Gbit/s. Small signal analysis shows that the intrinsic parameters (resonance frequency and damping) are wavelength dependent through the differential gain.
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| 10. |
- Larsson, Anders, 1957, et al.
(författare)
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High-speed tunable and fixed-wavelength VCSELs for short-reach optical links and interconnects
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760H-
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Konferensbidrag (refereegranskat)abstract
- This paper presents a review of recent work on high speed tunable and fixed wavelength vertical cavity surface emitting lasers (VCSELs) at Chalmers University of Technology. All VCSELs are GaAs-based, employ an oxide aperture for current and/or optical confinement, and emit around 850 nm. With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, our fixed wavelength VCSELs have reached a modulation bandwidth of 23 GHz, which has enabled error-free 40 Gbps back-to-back transmission and 35 Gbps transmission over 100 m of multimode fiber. A MEMS-technology for wafer scale integration of tunable high speed VCSELs has also been developed. A tuning range of 24 nm and a modulation bandwidth of 6 GHz have been achieved, enabling error-free back-to-back transmission at 5 Gbps.
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