SwePub
Sök i SwePub databas

  Extended search

AND is the default operator and can be omitted

Träfflista för sökning "AMNE:(ENGINEERING AND TECHNOLOGY Nano-technology Nano-technology) srt2:(1990-1994)"

Search: AMNE:(ENGINEERING AND TECHNOLOGY Nano-technology Nano-technology) > (1990-1994)

  • Result 1-8 of 8
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Gabriel, B. L., et al. (author)
  • Site-specific adhesion of Staphylococcus epidermidis (RP12) in Ti-Al-V metal systems
  • 1994
  • In: Biomaterials. - : Elsevier BV. - 0142-9612 .- 1878-5905. ; 15:8, s. 628-634
  • Journal article (peer-reviewed)abstract
    • Staphylococcus epidermidis (RP12) adhesion patterns were studied on the following titanium (Ti)-aluminium (Al)-vanadium (V) metal systems: (i) microfabricated samples consisting of Ti, Al and V islands deposited onto Ti or V substrata, (ii) pure Ti, Al and V metals, and (iii) medical grade Ti6Al4-V alloy. All of these surfaces were covered with their respective oxides formed upon exposure of the metals to air. Quantitative analysis of the number of cells bound per unit area indicates that S. epidermidis (RP12) exhibits greatest adhesion to pure V surfaces. When exposed to surfaces having controlled spatial variations in chemical composition on the 10 mu m scale (microfabricated samples), the bacteria preferentially populate V islands versus Ti or Al substrata. In the case of the biphasic Ti6Al4V alloy, the bacteria tend to adhere to V-rich, mixed phase regions and phase boundaries. These findings demonstrate that enhanced and preferential adhesion of S. epidermidis (RP12) occurs on V surfaces in TI-Al-V metal systems and suggest that bacterial interactions are influenced by surface oxide composition.
  •  
2.
  •  
3.
  •  
4.
  • Dutta, Joydeep, et al. (author)
  • Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
  • 1992
  • In: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 31:3B, s. L299-L302
  • Journal article (peer-reviewed)abstract
    • The contribution of ion bombardment to the growth of hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapour deposition from silane and xenon-diluted silane source gases was studied by applying an external d.c. voltage to the substrate electrode. The role played by the xenon ions in the growth of the materials prepared from xenon-diluted silane source gas has been considered. It is demonstrated that the xenon ions are responsible for the growth of the materials showing stable photoconductivity behaviour under light illumination.
  •  
5.
  •  
6.
  •  
7.
  •  
8.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-8 of 8

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view