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- Gustafsson, Oscar, 1983-
(författare)
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Type-II interband quantum dot photodetectors
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). These either suffer from compositional variations that are detrimental to the system performance as in the case of MCT, or, have an efficient dark current generation mechanism that limits the operating temperature as for QWIPs. The need for increased on-wafer uniformity and elevated operating temperatures has resulted in the development of various alternative approaches, such as type-II strained-layer superlattice detectors (SLSs) and intraband quantum-dot infrared photodetectors (QDIPs).In this work, we mainly explore two self-assembled quantum-dot (QD) materials for use as the absorber material in photon detectors for the LWIR, with the aim to develop low-dark current devices that can allow for high operating temperatures and high manufacturability. The detection mechanism is here based on type-II interband transitions from bound hole states in the QDs to continuum states in the matrix material.Metal-organic vapor-phase epitaxy (MOVPE) was used to fabricate (Al)GaAs(Sb)/InAs and In(Ga)Sb/InAs QD structures for the development of an LWIR active material. A successive analysis of (Al)GaAs(Sb) QDs using absorption spectroscopy shows strong absorption in the range 6-12 µm interpreted to originate in intra-valence band transitions. Moreover, record-long photoluminescence (PL) wavelength up to 12 µm is demonstrated in InSb- and InGaSb QDs.Mesa-etched single-pixel photodiodes were fabricated in which photoresponse is demonstrated up to 8 µm at 230 K with 10 In0.5Ga0.5Sb QD layers as the active region. The photoresponse is observed to be strongly temperature-dependent which is explained by hole trapping in the QDs. In the current design, the photoresponse is thermally limited at typical LWIR sensor operating temperatures (60-120 K), which is detrimental to the imaging performance. This can potentially be resolved by selecting a matrix material with a smaller barrier for thermionic emission of photo-excited holes. If such an arrangement can be achieved, type-II interband InGaSb QD structures can turn out to be interesting as a high-operating-temperature sensor material for thermal imaging applications.
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- Junesand, Carl, 1981-
(författare)
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High-quality InP on Si and concepts for monolithic photonic integration
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- As the age of Moore’s law is drawing to a close, continuing increase in computing performance is becoming increasingly hard‐earned, while demand for bandwidth is insatiable. One way of dealing with this challenge is the integration of active photonic material with Si, allowing high‐speed optical inter‐ and intra‐chip connects on one hand, and the economies of scale of the CMOS industry in optical communications on the other. One of the most essential active photonic materials is InP, stemming from its capability in combination with its related materials to produce lasers, emitting at wavelengths of 1300 and 1550 nm, the two most important wavelengths in data‐ and telecom.However, integrating InP with Si remains a challenging subject. Defects arise due to differences in lattice constants, differences in thermal expansion coefficients, polarity and island‐like growth behavior. Approaches to counter these problems include epitaxial lateral overgrowth (ELOG), which involves growing InP laterally from openings in a mask deposited on a defective InP/Si substrate. This approach solves some of these problems by filtering out the previously mentioned defects. However, filtering may not be complete and the ELOG and mask themselves may introduce new sources for formation of defects such as dislocations and stacking faults.In this work, the various kinds of defects present in InP ELOG layers grown by hydride vapor phase epitaxy on Si, and the reason for their presence, as well as strategies for counteracting them, are investigated. The findings reveal that whereas dislocations appear in coalesced ELOG layers both on InP and InP/Si, albeit to varying extents, uncoalesced ELOG layers on both substrate types are completely free of threading dislocations. Thus, coalescence is a critical aspect in the formation of dislocations. It is shown that a rough surface of the InP/Si substrate is detrimental to defect‐free coalescence. Chemical‐mechanical polishing of this surface improves the coalescence in subsequent ELOG leading to fewer defects.Furthermore, ELOG on InP substrate is consistently free of stacking faults. This is not the case for ELOG on InP/Si, where stacking faults are to some extent propagating from the defective substrate, and are possibly also forming during ELOG. A model describing the conditions for their propagation is devised; it shows that under certain conditions, a mask height to opening width aspect ratio of 3.9 should result in their complete blocking. As to the potential formation of new stacking faults, the formation mechanism is not entirely clear, but neither coalescence nor random deposition errors on low energy facets are the main reasons for their formation. It is hypothesized that the stacking faults can be removed by thermal annealing of the seed and ELOG layers.Furthermore, concepts for integrating an active photonic device with passive Si components are elucidated by combining Si/SiO2 waveguides used as the mask in ELOG and multi‐quantum well (MQW) lasers grown on ELOG InP. Such a device is found to have favorable thermal dissipation, which is an added advantage in an integrated photonic CMOS device.
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- Redjai Sani, Sohrab
(författare)
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Fabrication and Characterization of Nanocontact Spin-Torque Oscillators
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The manufacturing of nanocontact-based spin-torque oscillators (NC-STOs)has opened the door for spintronic devices to play a part as active microwaveelements. The NC-STO has the capability of converting a direct current intoa microwave signal, and vice versa, by utilizing the spin transfer torque (STT)in ferromagnetic multilayer systems. However, the high-frequency operation ofNC-STOs typically requires high magnetic fields and the microwave power theygenerate is rather limited. As a result, NC-STOs are not yet commercially used,and they require improvements in both material systems and device geometriesbefore they can find actual use in microwave applications.In order to improve and advance this technology, NC-STOs are requiredwith both different nanocontact (NC) sizes and geometries, and using differ- ent stacks of magnetic materials. This dissertation presents experimental in- vestigations into the manufacturing of such devices using different fabrication techniques and a number of different magnetic material stacks. Currently, the fabrication of NC-STOs is limited to advanced laboratories, because NC fabri- cation requires high-resolution lithography tools. In the present work, we have developed an alternative method of fabrication, which does not require such tools and has the capability of fabricating NC-STOs having one to hundreds of NCs in a variety of sizes, possibly down to 20 nm. Devices fabricated with this method have shown mutual synchronization of three parallel-connected NCs, and pairwise synchronization in devices with four and five NCs.Furthermore, the present work demonstrates low-field operation (down to0.02 Tesla) of NC-STOs at a record high frequency of 12 GHz. This wasachieved by implementing multilayers with a perpendicular magnetic anisotropy(PMA) material in the free layer of the NC-STO. In addition, the fabricateddevices revealed an unexpected dynamic regime under large external appliedfield (above 0.4 Tesla). The new dynamic regime was found to be due to anentirely novel nanomagnetic dynamic object â a so-called magnetic droplet soliton,predicted theoretically in 1977 but not experimentally observed until now.Detailed experiments and micromagnetic simulations show that the droplet hasvery rich dynamics.Finally, spin-torque-induced transverse spin wave instabilities have beenstudied. A NC-STO with a material stack consisting of a single ferromag- netic metal sandwiched between two non-ferromagnetic metals was fabricated. Prior to this work, evidence of spin wave instabilities was reported as resis- tance switching in nanopillar- and mechanical point contact based STOs. In the present work, the fabricated NC-STOs showed actual microwave signals up to 3 GHz under zero applied field with strong current hysteresis. All the fabricated NC-STOs open up new means of studying STT in different environ- ments, in order to resolve their current drawbacks for industrial applications.
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