| 1. |
- Bengtsson, Olof, et al.
(författare)
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Small Signal and Power Evaluation of Novel BiCMOS Compatible, Short Channel LDMOS Technology
- 2003
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Ingår i: IEEE transactions on microwave theory and techniques. - 0018-9480 .- 1557-9670. ; 51:3, s. 1052-1056
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Tidskriftsartikel (refereegranskat)abstract
- We describe a very short-channel 0.15-mum LDMOS transistor with a breakdown voltage of up to 60 V, manufactured in a standard 0.35-mum BiCMOS process. At 1900 MHz and a 12-V supply voltage, the 0.4-mm-gatewidth device with shortest drain drift region gives 100-mW output power P-1 dB at a drain efficiency of 43%. It has a transducer power gain of over 20 dB. The maximum current gain cutoff frequency f(T) is 15 GHz, and the maximum available gain cutoff frequency f(MAX) is 38 GHz. We show the dependence of f(T), an f(MAX) of gate and drain bias for transistors with different-drain drift region length. The LDMOS process module does not affect the performance or the models of other devices. We present for the first time a simple way to create high-voltage high-performance LDMOS transistors for an RF power amplifier use even in a very downscaled silicon technology.
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| 2. |
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| 3. |
- Gevorgian, Spartak, 1948, et al.
(författare)
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Do we really need ferroelectrics in paraelectric phase only in electrically controlled microwave devices?
- 2001
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 49:11, s. 2117 - 2124
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Tidskriftsartikel (refereegranskat)abstract
- Typical paraelectric materials (e.g., SrTiO3, KTaO3, BaxSr1-xTiO3, x 10 GHz) is of the order of 0.01 (at zero dc-bias field) at room temperature. Nevertheless, quite promising component and subsystem level devices are successfully demonstrated. Use of ceramic (bulk and thick film) ferroelectrics in tunable microwave devices, currently considered for industrial applications, offer cost reduction. In this paper, explicitly for the first time, we consider possibilities and benefits of using ferroelectrics in polar phase in electrically controllable microwave devices. Examples of using ferroelectrics in polar state (e.g., Na0.5K0.5NbO3, SrTiO3 in antiferroelectric phase) in electrically tunable devices are reported
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| 4. |
- Kuylenstierna, Dan, 1976, et al.
(författare)
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Design of broad-band lumped-element baluns with inherent impedance transformation
- 2004
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 52:12, s. 2739-45
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Tidskriftsartikel (refereegranskat)abstract
- This paper reports on a novel lumped balun topology, the second-order lattice balun, with broad-band performance. The design is based on synthetic transmission lines operating as impedance transformers. The characteristic impedance of the synthetic transmission lines may be chosen to obtain inherent impedance transformation. An analytical investigation results in closed formulas for optimum performance over a given bandwidth. It is shown that it is possible to design for equal ripple in amplitude balance and input reflection coefficient. The phase balance is theoretically perfect over the entire bandwidth. The concept is experimentally validated by a 1-GHz prototype fabricated with surface mounted chip components. It exhibits an amplitude balance better than 0.5 dB and a phase balance better than +or-8 degrees over an octave bandwidth. The effective area of the prototype is 7 * 9 mm/sup 2/
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| 5. |
- Stake, Jan, 1971, et al.
(författare)
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Heterostructure-Barrier-Varactor Design
- 2000
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 48:4, s. 677-682
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we propose a simple set of accurate frequency-domain design equations for calculation of optimum embedding impedances, optimum input power, bandwidth, and conversion efficiency of heterostructure-barrier-varactor (HBV) frequency triplers. A set of modeling equations for harmonic balance simulations of HBV multipliers are also given. A 141-GHz quasi-optical HBV tripler was designed using the method and experimental results show good agreement with the predicted results.
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| 6. |
- Willen, Bo G., et al.
(författare)
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Improved automatic parameter extraction of InP-HBT small-signal equivalent circuits
- 2002
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Ingår i: IEEE transactions on microwave theory and techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 50:2, s. 580-583
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Tidskriftsartikel (refereegranskat)abstract
- An improved automatic extraction technique for determination of the element values of an InP heterojunction-bipolar-transistor small-signal T-model is presented. Numerical optimization is shown to yield reproducible and physically relevant results when using a suitable figure-of-merit. The outcome of such an extraction is displayed for a range of operation points and the resulting bias dependencies of the element values is shown to be in good agreement with theoretical effects. The technique is further used to validate the quality of the extraction itself by showing a significant sensitivity to a deliberate error in the value of each element.
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| 7. |
- Yang, Jian, 1960, et al.
(författare)
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A Fast Mode Analysis for Waveguides of Arbitrary Cross Section With Multiple Regions by Using a Spectrum of Two-Dimensional Solutions and Asymptotic Waveform Evaluation
- 2004
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 52:6, s. 1615-1621
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Tidskriftsartikel (refereegranskat)abstract
- A fast mode analysis for waveguides of arbitrary cross section with multiple regions is presented in this paper. The analysis is based on a spectrum of two-dimensional (2-D) solutions with application of asymptotic waveform evaluation, which requires only several 2-D solutions in searching for the propagation modes and calculating the field distribution of the modes in waveguides. The boundaries of waveguides can be modeled by perfect electric conductors, perfect magnetic conductors, dielectric materials, and asymptotic strip boundary conditions. By this modeling, one can also analyze the waveguides with the soft and hard surfaces. The method is excitation dependent, which provides a tool to analyze the response of different modes to different excitations. No existence of spurious modes is experienced by using this method. The verification and comparison of the numerical results with analytical, published data, and measurements are also presented in this paper.
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| 8. |
- Eisele, H, et al.
(författare)
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Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above
- 2000
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Ingår i: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9480. ; 48:4, s. 626-631
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Tidskriftsartikel (refereegranskat)abstract
- Improved heat dissipation in InP Gunn devices resulted in RF power levels exceeding 200, 130, 80, and 25 mW at oscillation frequencies of around 103, 132, 152, and 162 GHz, respectively. Corresponding dc-to-RF conversion efficiencies exceeded 2.3% from 10
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| 9. |
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