| 1. |
- Araujo, C. M., et al.
(författare)
-
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si
- 2002
-
Ingår i: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
-
Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.
|
|
| 2. |
- Iwata, H., et al.
(författare)
-
A new type of quantum wells : Stacking faults in silicon carbide
- 2003
-
Ingår i: Microelectronics Journal. - 0026-2692. ; 34:5, s. 371-374
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on a new type of quantum wells with the width as thin as 10Å, which are composed of SiC only, and consequently have ideal interfaces. These quantum wells are actually stacking faults in SiC. Certain types of stacking faults in SiC polytypes create small 3C-like regions, where the stacking sequences along the c-axis become locally cubic in the hexagonal host crystals. Since the conduction band offsets between the cubic and hexagonal polytypes are very large with the conduction band minima of 3C-SiC lower than that of the other polytypes, such thin 3C inclusions can introduce locally lower conduction bands, thus acting as quantum films perpendicular to the c-axis. One mechanism for the occurrence of stacking faults in the perfect SiC single crystals is the motion of partial dislocations in the basal planes, the partial dislocations leaving behind stacking fault regions. © 2003 Elsevier Science Ltd. All rights reserved.
|
|
| 3. |
|
|
