| 1. |
- Nilsson, Hans-Erik, et al.
(författare)
-
An Investigation of the blocking characteristics of the Permeable Base Transistor
- 1998
-
Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:3, s. 297-305
-
Tidskriftsartikel (refereegranskat)abstract
- A numerical study of the blocking characteristics of the Permeable Base Transistor (PBT) is presented. The PBT is regarded as a promising transistor structure for high voltage and high frequency applications. Numerical studies of the PBT were focused on the high frequency figure of merits or the breakdown characteristics of the Schottky gate. A device designed for high frequency and high voltage switching should be optimized for large blocking and fast switching. The trade off between blocking and speed is a complicated matter which depends strongly on the geometry and doping level. In this work we studied the blocking characteristics for a Silicon PBT with regard to the doping level and doping profile, gate thickness and gate to drain distance. A scaling formalism was developed in order to estimate the transistor performance for a wide range of doping levels and geometrical combinations. A design example is presented of a normally off transistor that can block a drain to source voltage of 10 V while the unity current gain frequency fT value for Vgs = 0.2 V is higher than 7 GHz.
|
|
| 2. |
- Zetterling, Carl-Mikael, et al.
(författare)
-
A novel UMOS capacitor test structure for SiC devices
- 1996
-
Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 39:9, s. 1396-1397
-
Tidskriftsartikel (refereegranskat)abstract
- In this paper we propose the use of U-grooved MOS capacitors to investigate oxides intended for U-grooved MOSFETs and IGBTs in silicon carbide. The UMOS capacitor uses only two mask layers, and has vertically etched walls and a gate contact that overlaps the step. We have manufactured UMOS capacitors in n-type 6H SiC with dry thermal gate oxides, and compared the capacitance voltage characteristics to those of flat reference capacitors. It was found that the general appearance of capacitance-voltage curves was unchanged by the addition of the vertical grooves, although the leakage through the oxide was increased. The oxide thickness on the sidewalls was approximately the same as on the flat parts of the devices. Copyright © 1996 Elsevier Science Ltd.
|
|
| 3. |
- Wang, J. J., et al.
(författare)
-
High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
- 1998
-
Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:5, s. 743-747
-
Tidskriftsartikel (refereegranskat)abstract
- Etch rates of ∌3,500 Å/min for 6H-SiC and ∌7,500 Å/min for SiC0.5N0.5 were obtained in inductively coupled plasmas with NF3-based chemistries. Similar etch rate trends were achieved with both NF3/O2 and NF3/Ar mixtures. The rates were strong functions of plasma composition, ion energy and ion fluxes, and were independent of conductivity type for SiC. Surface root-mean-square (RMS) roughness were 1-2 nm for etched SiC over a wide range of conditions indicating equi-rate removal of the SiFx and CFx etch products, but SiCN surfaces became extremely rough (RMS roughness > 20 nm) for F2-rich plasma conditions. The etched surfaces of SiC were chemically clean and stoichiometric, with small (<0.2 at%) quantities of N2- or F2- containing residues detected. © 1998 Elsevier Science Ltd. All rights reserved.
|
|
| 4. |
- Wang, J. J., et al.
(författare)
-
ICP etching of SiC
- 1998
-
Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:12, s. 2283-2288
-
Tidskriftsartikel (refereegranskat)abstract
- A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/ Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in an inductively coupled plasma tool. Rates above 2000 Å cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni is preferred. © 1998 Published by Elsevier Science Ltd. All rights reserved.
|
|
| 5. |
- Zetterling, Carl-Mikael, et al.
(författare)
-
Junction barrier Schottky diodes in 6H SiC
- 1998
-
Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:9, s. 1757-1759
-
Tidskriftsartikel (refereegranskat)abstract
- Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100 V with a leakage current density of 0.15 A cm-2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20 mΩ cm2, resulting in forward voltage drops of 2.6 V at 100 A cm-2. © 1998 Published by Elsevier Science Ltd. All rights reserved.
|
|
| 6. |
- Keskitalo, Niklas, et al.
(författare)
-
Simulation of forward bias injection in proton irradiated silicon pn-junctions
- 1996
-
Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 39:7, s. 1087-1092
-
Tidskriftsartikel (refereegranskat)abstract
- A multilevel recombination model is implemented in the simulation program MEDICI to simulate proton irradiated silicon. First the model is used to simulate charge carrier distributions in proton irradiated silicon p(+)n-diodes in order to evaluate deep le
|
|
| 7. |
|
|
| 8. |
- Vandamme, LKJ, et al.
(författare)
-
Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation
- 1999
-
Ingår i: SOLID-STATE ELECTRONICS. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1101. ; 43:4, s. 697-700
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channels has been found. At fixed drain voltage, biasing the device well in saturation, the noise current abruptly decreased by more than an order of magnitude with increasing gate volta
|
|
