| 1. |
- CHAKAROV, DV, et al.
(författare)
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WATER-ADSORPTION ON GRAPHITE(0001)
- 1995
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Ingår i: Vacuum. - 0042-207X .- 1879-2715. ; 46:8-10, s. 1109-1112
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Tidskriftsartikel (refereegranskat)abstract
- Wafer adsorption on the clean graphite (0001) surface has been studied by high-resolution electron-energy-loss spectroscopy (HREELS) and temperature-programmed desorption (TPD). At 85 K H2O adsorbs non-dissociatively forming hydrogen-bonded aggregates. The structure and the growth mode of water clusters depend on the substrate temperature and the coverage. At all coverages, above a few per cent of a monolayer (ML), the desorption is characterized by zero-order kinetics, while the HREEL spectra reveal a threshold coverage approximately 1 ML when the average co-ordination of the H2O molecules changes. Isothermal measurements of the desorption rate and HREELS measurements at elevated temperatures suggest an irreversible phase transition from amorphous to crystalline ice at approximately 135 K.
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| 2. |
- Jonsson, Lars, et al.
(författare)
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Controlled topography production - True 3D simulation and experiment
- 1995
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Ingår i: Vacuum. - 0042-207X .- 1879-2715. ; 46, s. 971-975
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Tidskriftsartikel (refereegranskat)abstract
- A true 3D computer program, named DINESE, has been developed to simulate the evolution of real 3D structures during erosion and deposition. It is based on the generalized Huygens reconstruction formalism of surface evolution and can predict the evolution of any surface of the form z = f(x,y) resulting from any erosion or deposition process. True 3D computer simulations of a number of cases are presented and compared with experiment. The powers of the simulation method are further demonstrated by a series of sequential predictive simulations resulting in a desired topography which is then verified experimentally under the same sequence of conditions. Specifically, the evolution of different Si3N4 structures during ion beam etching with Ar ions under different erosion conditions has been studied both numerically and experimentally.
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| 3. |
- Mankefors, S., et al.
(författare)
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Theoretical investigation of soft x-ray emission from a Si(100) layer buried in GaAs
- 1998
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 49:3, s. 181-184
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Tidskriftsartikel (refereegranskat)abstract
- Calculations of the soft x-ray emission spectrum have been carried out on a buried Si(100) layer in GaAs and compared with experimental data. We find that Si occupies Ga- as well as As-sites and that the local density of states is different for these two cases.
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| 4. |
- TJERNBERG, O, et al.
(författare)
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ANGLE-RESOLVED PHOTOEMISSION ON NIO - ON THE NATURE OF THE VALENCE-BAND
- 1995
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Ingår i: Vacuum. - 0042-207X .- 1879-2715. ; 46:8-10, s. 1215-1218
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Tidskriftsartikel (refereegranskat)abstract
- Angle resolved photoelectron spectroscopy has been performed on the valence band of NiO at the National Swedish Laboratory for Synchrotron Radiation. Normal emission spectra have been recorded for photon energies between 17 and 140 eV in order to study the electronic structure of the valence band. The experimentally determined band structure has been compared with a local density augmented plane wave band structure calculation. Signs of the influence of antiferromagnetic ordering are found and the general agreement between experimental and theoretical oxygen derived bands indicates strong hybridization between Ni 3d and O 2p orbitals.
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| 5. |
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| 6. |
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| 7. |
- Andersson, Åke, et al.
(författare)
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Some experiments on synchrotron radiation induced desorption at MAX
- 1995
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Ingår i: Vacuum. - 0042-207X. ; 46:8-10, s. 757-761
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Tidskriftsartikel (refereegranskat)abstract
- At the synchrotron radiation facility MAX, the rest gas pressure in the storage rings is dominated by synchrotron radiation induced gas desorption. This desorption decreases with accumulated photon dose. The rate of decrease, or conditioning, is of greatest importance, since an acceptable machine performance, after opening the vacuum system, is highly dependent on the vacuum recovery. In MAX II the synchrotron radiation will hit specially designed absorbers. In order to finalize the design of these absorbers, a series of measurements were performed at the MAX I ring. Here we present the experimental results, which suggest that the area exposed to the emitted photoelectrons should be minimized, in order to obtain a higher rate of conditioning.
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| 8. |
- Lundgren, E., et al.
(författare)
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Alkali core level binding energy shifts from buried interfaces between alkali films and metallic substrates with different surface index
- 1995
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Ingår i: Vacuum. - 0042-207X. ; 46:8-10, s. 1159-1163
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Tidskriftsartikel (refereegranskat)abstract
- Core level binding energy shifts from approximately three layers of different alkali metals deposited on Pd(111), Pd(100), Rh (111), and Rh (110) are presented in order to demonstrate how the packing of the substrate surface affects the layer-resolved alkali core level binding energy shifts. It is found that a more open surface induces a larger alkali core level binding energy shift. It is shown that this behaviour can be explained as a consequence of the higher coordination of the alkali metal atom to the substrate on a more open surface than on a more closed packed surface.
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| 9. |
- Vavra, I, et al.
(författare)
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Electron-beam mixing of W1 - xSix Si multilayers
- 1995
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Ingår i: Vacuum. - 0042-207X. ; 46:8-10, s. 1063-1064
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Tidskriftsartikel (refereegranskat)abstract
- The high energy electron beam was used for the local amorphisation of metallic multilayer. The observed effect is proposed for the application in nanometer-scale technology.
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| 10. |
- Vavra, I, et al.
(författare)
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Structural and electrical properties of superconducting Nb/Si multilayers
- 1998
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Ingår i: Vacuum. - 0042-207X. ; 50:1-2, s. 31-33
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Tidskriftsartikel (refereegranskat)abstract
- We have found the deposition technology at which the interface roughness of Nb/Si multilayer is strongly correlated and decreases with deposited layer number. On the basis of our Nb/Si multilayer we succeeded to prepare ten-fold stacked Josephson junction (JJ). Basic electric properties of stacked JJ are presented.
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