| 1. |
- Alouhmy, M., et al.
(författare)
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Effects of hydrogen implantation on the magnetocaloric properties of amorphous FeZr films
- 2021
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 186
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Tidskriftsartikel (refereegranskat)abstract
- We report on the effects of H-implantation on the magnetic and magnetocaloric properties of amorphous FeZr films. Arrott plots reveal a second order ferromagnetic to paramagnetic phase transition for the as-grown and H-implanted films, with an increase in T-C from 160 to 200 K upon implantation. The maximum change in magnetic entropy (-Delta S-M) increases from 0.66 to 0.77J/kgK for a field change mu 0 Delta H = 1.5T, as well as the relative cooling power (RCP) values were improved from 84.5 to 108.6J/kg. This improvement was attributed to the increase in magnetization and chemical inhomogeneity induced by the implantation process. The increase in the chemical inhomogeneity was supported by the determination of the local exponent n extracted from the slope of Ln(-Delta S-M) as a function of Ln(mu 0H), which is line with the simulated depth profile of hydrogen atoms through the FeZr film.
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| 2. |
- Bakhit, Babak, 1983-, et al.
(författare)
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Dense Ti0.67Hf0.33B1.7 thin films grown by hybrid HfB2-HiPIMS/TiB2-DCMS co-sputtering without external heating
- 2021
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 186
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Tidskriftsartikel (refereegranskat)abstract
- There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti0.67Hf0.33B1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB2-HiPIMS/TiB2-DCMS) in pure Ar on Al2O3(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf+) irradiation promoting the growth of dense Ti0.67Hf0.33B1.7.
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| 3. |
- Bakhit, Babak, 1983-, et al.
(författare)
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Multifunctional ZrB2-rich Zr1-xCrxBy thin films with enhanced mechanical, oxidation, and corrosion properties
- 2021
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Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 185
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Tidskriftsartikel (refereegranskat)abstract
- Refractory transition-metal (TM) diborides have high melting points, excellent hardness, and good chemical stability. However, these properties are not sufficient for applications involving extreme environments that require high mechanical strength as well as oxidation and corrosion resistance. Here, we study the effect of Cr addition on the properties of ZrB2-rich Zr1-xCrxBy thin films grown by hybrid high-power impulse and dc magnetron co-sputtering (Cr-HiPIMS/ZrB2-DCMS) with a 100-V Cr-metal-ion synchronized potential. Cr metal fraction, x = Cr/(Zr+Cr), is increased from 0.23 to 0.44 by decreasing the power Pzrb2 applied to the DCMS ZrB2 target from 4000 to 2000 W, while the average power, pulse width, and frequency applied to the HiPIMS Cr target are maintained constant. In addition, y decreases from 2.18 to 1.11 as a function of Pzrb2, as a result of supplying Cr to the growing film and preferential B resputtering caused by the pulsed Cr-ion flux. ZrB2.18, Zr0.77Cr0.23B1.52, Zr0.71Cr0.29B1.42, and Zr0.68Cr0.32B1.38 2 films have hexagonal AlB2 crystal structure with a columnar nanostructure, while Zr0.64Cr0.36B1.30 and Zr0.56Cr0.44B1.11 are amorphous. All films show hardness above 30 GPa. Zr0.56Cr0.44B1.11 alloys exhibit much better toughness, wear, oxidation, and corrosion resistance than ZrB2.18. This combination of properties makes Zr0.56Cr0.44B1.11 ideal candidates for numerous strategic applications.
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| 4. |
- Bardos, Ladislav, et al.
(författare)
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Radio frequency powered spiral hollow cathodes
- 2020
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 175
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Tidskriftsartikel (refereegranskat)abstract
- Potential usage of the radio frequency (RF) spiral hollow electrodes in comparison with the compact hollow cathodes was examined for coating and other surface processing treatments. Most properties were found similar to the compact RF hollow cathodes. The non-conventional shapes of spiral hollow cathodes can be suitable for the inner coating in narrow tubes and pipes. Small diameter spiral cathodes can generate focused high-density ion flux capable of rapid etching of the substrate.
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| 5. |
- Beshkova, Milena, et al.
(författare)
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Properties and potential applications of two-dimensional AlN
- 2020
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 176
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Forskningsöversikt (refereegranskat)abstract
- The success of Graphene has triggered the research interest in other stable, single and few-atom-thick layers of van der Waals materials, which can possess attractive and technologically useful properties. Other complex structures, such as boron nitride, MXenes and metal chalcogenides have been successfully synthesized as layered materials showing advanced properties. Here, after an introduction briefing novel 2D materials, we focus on 2D AlN and present a review covering theoretical considerations on the stability of an infinite hexagonal AlN (h-AlN) sheet, differences that occur in the electronic structure between bulk AlN and single layer and discuss possible methods of tuning their electronic and magnetic properties by manipulating the surface and strain using DFT (density functional theory) computations. We address potential applications of 2D-AlN with an emphasis on gas sensing for CO2, CO, H-2, O-2, NO and NO2 in the presence of NH3. Further, we discuss some growth strategies of AlN single layer and few layers on different substrates. 2D AlN layers and nanotubes with ultrawide bandgap (9.20-9.60 eV) which shows a great potential to support innovative and front-end development of deep-ultraviolet optoelectronic devices are illustrated.
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| 6. |
- Chang, Jui-Che, et al.
(författare)
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HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate
- 2023
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 217
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Tidskriftsartikel (refereegranskat)abstract
- Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).
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| 7. |
- Ektarawong, A., et al.
(författare)
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A comparison of the mixing thermodynamics of the antifluorite-structured Mg2Si1-xGex, Mg2Sn1-xGex and Mg2Si1-xSnx alloys from first principles
- 2021
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 185
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Tidskriftsartikel (refereegranskat)abstract
- The mixing thermodynamics of the antifluorite-structured Mg2Si1-xGex is investigated using the first-principles calculations. We find that Mg2Si and Mg2Ge readily mix with each other leading to formation of a single-phase random solid solutions of Mg2Si1-xGex across the entire composition range from the temperature of about 50 K and above. At 0 K, Mg2Si1-xGex exhibits a weak energy preference toward local phase segregation into Mg2Si and Mg2Ge without forming any ordered patterns of Si and Ge atoms. Through a comparison with the mixing thermodynamics of Mg2Sn with Mg2Si or Mg2Ge, a small lattice misfit between Mg2Si and Mg2Ge of less than 1 % is responsible for the formation of stable Mg2Si1-xGex random solid solutions at such a low temperature. Besides their thermodynamic stability, our prediction reveals that the random solid solutions of Mg2Si1-xGex are dynamically and mechanically stable. These findings justify the uses of structural models of Mg2Si1-xGex, assuming a random distribution of Si and Ge atoms in the previous theoretical studies, and also provide an insight into the complete solubility of Mg2Ge in Mg2Si and vice versa at all temperature where the atomic diffusion is activated.
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| 8. |
- Gangaprasad Rao, Smita, 1992-, et al.
(författare)
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Plasma diagnostics and film growth of multicomponent nitride thin films with magnetic-field-assisted-dc magnetron sputtering
- 2022
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 204
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Tidskriftsartikel (refereegranskat)abstract
- During direct current magnetron sputtering (dcMS) of thin films, the ion energy and flux are complex parameters that influence thin film growth and can be exploited to tailor their properties. The ion energy is generally controlled by the bias voltage applied at the substrate. The ion flux density however is controlled by more complex mechanisms. In this study, we look into magnetic-field-assisted dcMs, where a magnetic field applied in the deposition chamber by use of a solenoid coil at the substrate position, influences the energetic bombardment by Ar ions during deposition. Using this technique, CrFeCoNi multicomponent nitride thin films were grown on Si(100) substrates by varying the bias voltage and magnetic field systematically. Plasma diagnostics were performed by a Langmuir wire probe and a flat probe. On interpreting the data from the current-voltage curves it was confirmed that the ion flux at the substrate increased with increasing coil magnetic field with ion energies corresponding to the applied bias. The increased ion flux assisted by the magnetic field produced by the solenoid coil aids in the stabilization of NaCl B1 crystal structure without introducing Ar ion implantation.
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| 9. |
- Geng, Dongsen, et al.
(författare)
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Impact of Si addition on oxidation resistance of Zr-Si-N nanocomposite films
- 2021
-
Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 183
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Tidskriftsartikel (refereegranskat)abstract
- Incorporating Si element into nitride films is known to enhance mechanical properties and oxidation resistance. Here, we reported the nanocomposite films of Zr-Si-N deposited using a hybrid deposited system combining rf magnetron sputtering from a Si3N4 target with dc magnetron sputtering from Zr target. Microstructure and oxidation resistance of Zr-Si-N nanocomposite films with 0-20.9 at.% Si content were investigated. The results indicated that the binary Zr-N film exhibits a typical columnar structure and the Zr-Si-N films become denser as the elevated Si content. The cross-section of film transforms to a dense and glassy structure when increasing the Si concentrations. The oxide scales of the Zr-Si-N films consist of ZrO2 nanograins and amorphous SiNx tissue. The introduction of the Si element significantly improves the oxidation resistance of the Zr-Si-N films due to the amorphous SiNx tissue phase suppresses both the inward diffusion of the oxygen and cracking in oxide scale caused by the phase transition from t-ZrO2 to m-ZrO2.
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| 10. |
- Greczynski, Grzegorz, et al.
(författare)
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Impact of sample storage type on adventitious carbon and native oxide growth : X-ray photoelectron spectroscopy study
- 2022
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Ingår i: Vacuum. - : Pergamon-Elsevier Science Ltd. - 0042-207X .- 1879-2715. ; 205
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Tidskriftsartikel (refereegranskat)abstract
- The type and degree of contamination on surfaces intended for X-ray photoelectron spectroscopy (XPS) studies is considered decisive for meaningful and reliable analysis as in many cases in-situ cleaning methods are not applicable or otherwise undesired. We report on the effects of sample storage environment on predominantly carbon-and oxygen-containing species accumulating on the surfaces of fourteen types of thin film samples spanning group IVB-VIB transition metals (TMs), TM nitrides, and TM diborides. All specimens were deposited by magnetron sputtering and stored for six months in different common sample storage environments such as openly on a shelf in the office or XPS lab, or within a polypropylene wafer carrier, polystyrene box, cellulose/polyester wipers or sealed polyethylene bag. Self-consistent modelling of C 1s, O 1s, B 1s, N 1s, and metal core level spectra allowed to identify the types and quantities of surface contaminants, metal oxidation states, and thicknesses of native oxides, as well as to address influence from storage ambient type and volume, direct sample contact to other surfaces, or material release from containers. The results reveal significant differences between the various storage types and, hence, provide guidance for all sorts of studies including even those that employ Ar+ ion etch prior to analyses, as also in such cases the amount and type of surface contaminants may impact the outcome.
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