| 1. |
- Gunnarsson, Sten, 1976, et al.
(författare)
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pHEMT and mHEMT Ultra Wideband Millimeterwave Balanced Resistive Mixers
- 2004
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2, s. 1141-1144
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Two ultra wideband millimeterwave single balanced resistive mixers utilizing a Marchand balun for the LO-hybrid are simulated, fabricated and characterized for 30-60 GHz in both up and down conversion. Two different versions of the mixer were manufactured in a commercial pHEMT-MMIC and a mHEMT-MMIC process respectively. A measured down conversion loss of approximately 6 to 12 dB over the whole band is obtained for both versions of the mixer with external IF power combining. In spite of the balanced design, the required LO power is quite low, 2 dBm is sufficient for low conversion loss. The LO-RF isolation is excellent, often more than 30 dB for both type of mixers. Low noise figure and high IIP3 figures are obtained. It is also shown that by applying selective drain bias, up to 5 dB improvement of IIP3 can be obtained for the mHEMT mixer with small LO powers.
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| 2. |
- Vickes, Hans-Olof, et al.
(författare)
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The influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeter-wave frequencies
- 2004
-
Ingår i: Microwave Symposium Digest , 2004 IEEE MTT-S International. - 0149-645X. ; 2, s. 971-974
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Tidskriftsartikel (refereegranskat)abstract
- We report the experimental and theoretical evaluation of the noise and the high frequency gain performances applied to a very short channel 90-nm CMOS transistor. We show that gate leakage currents modify the behavior of the noise parameters Rn, Fmin and Zopt only in the low gigahertz range. The gate resistance, Rg, on the contrary, have influence on the noise performance over the complete frequency range. Noise parameters have been measured in the frequency range 2-26 GHz and the S-parameters have been measured up to 62.5 GHz. The proposed model has been used in the design of a 2-stage 40 GHz amplifier.
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