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- Lindstrom, JL, et al.
(författare)
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Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon
- 1999
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 274, s. 291-295
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Tidskriftsartikel (refereegranskat)abstract
- Infrared absorption from oxygen-related defects in Si crystals irradiated with electrons (2.5 MeV) at room temperature (RT) and in the range 300-600 degrees C has been investigated. Two new vibrational bands positioned at 10 K at about 1370 and 1430 cm(-1) were observed in samples irradiated at RT. A good correlation is found between these lines and the bands at 836 and 885 cm(-1) known to originate from asymmetrical stretching vibrations (B-1 mode) of an oxygen atom in the neutral and negative VO complex. An attribution of the 1370 and 1430 cm(-1) bands to a combination of the B-1 mode with the symmetrical stretching A(1) mode (weakly IR active) for different charge states of VO is argued to be the most probable. A band at 833.4 cm(-1) is found to increase in strength upon annihilation of divacancies at 250-300 degrees C. The V2O complex is suggested to give rise to this band. New experimental data confirming an attribution of the 895 cm(-1) band to the VO2 complex are presented as well. (C) 1999 Elsevier Science B.V. All rights reserved.
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