InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers

• InAs/In0.83Al0.17As quantum wells have been demonstrated on In0.83Al0.17As metamorphic layers on GaP/Si substrates. The effects of GaxIn1-xP and GaAsyP1-y graded buffer layers on the sample performances are investigated. The sample with GaxIn1-xP metamorphic buffer layer has narrower width in X-ray diffraction reciprocal space maps, indicating less misfit dislocations in the sample. Mid-infrared photoluminescence signals have been observed for both samples at room temperature, while the sample with GaxIn1-xP metamorphic buffer shows stronger photoluminescence intensity at all temperatures. The results indicate the metamorphic buffers with mixed cations show superior effects for the mid-infrared InAs quantum wells on GaP/Si composite substrates.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Keramteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Ceramics (hsv//eng)

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Quantum wells

GaP/Si

Mid-infrared

Metamorphic buffer

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