| 1. |
- Chacinski, Marek, et al.
(författare)
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100 Gb/s ETDM Transmitter Module
- 2010
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 16:5, s. 1321-1327
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Tidskriftsartikel (refereegranskat)abstract
- Components of a 100 Gb/s transmitter with electrical time-division multiplexing are presented as following: electrical multiplexer, driver amplifier, and large-bandwidth distributed feedback-traveling-wave electro-absorption modulator module. The performance of the parts of the transmitter, as well as the complete chain, is investigated for data operation and transmission in future 100 Gb/s Ethernet (100GbE). Clearly open eye diagrams at 100 Gb/s are demonstrated together with data transmission over 300 m long standard single mode fiber link.
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| 2. |
- Enejder, Annika, 1969, et al.
(författare)
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Coherent Anti-Stokes Raman Scattering Microscopy of Cellular Lipid Storage
- 2010
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 16:3, s. 506-515
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Tidskriftsartikel (refereegranskat)abstract
- With the increasing number of studies using nonlinear microscopy in the biosciences, an awareness for the potentials of nonlinear optics has begun to emerge among a broader audience. Coherent anti-Stokes Raman scattering (CARS) microscopy is one of the most technically challenging methods in this category, forming images of molecular distributions based on their vibrations by a multiphoton interaction process. The primary strength of CARS microscopy lies in the ability of imaging lipids; the full 3-D distribution in living cells can be mapped without exogenous tags. Thus, CARS microscopy has a strong potential to become a central instrument for in vivo studies of the lipid metabolism at cellular level, improving present understanding of the mechanisms behind the many metabolism-related diseases, the impact of natural bioactive components in foods, and supporting the development of efficient pharmaceuticals as well as bioengineering processes exploiting the metabolism of microorganisms for the production of alternative energy sources. We illustrate this wide range of biological applications of CARS microscopy with a series of examples from our research.
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| 3. |
- Gao, S. M., et al.
(författare)
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Polarization-Independent Wavelength Conversion Using an Angled-Polarization Pump in a Silicon Nanowire Waveguide
- 2010
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 1077-260X .- 1558-4542. ; 16:1, s. 250-256
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Tidskriftsartikel (refereegranskat)abstract
- A proposal for polarization-independent wavelength conversion is presented based on four-wave mixing in a silicon nanowire waveguide using an angled-polarization pump. The principle of polarization independence is introduced and the theoretical model is established. The optimized incident pump polarization angle is obtained for different waveguide geometries, and a polarization-independent bandwidth of 64 nm is achieved with the efficiency fluctuation of less than 1 dB in a 285 nm x 650 nm silicon waveguide. The polarization-independent bandwidth is limited by the larger one of the TE- and TM-mode phase mismatches, and can be enhanced further by carefully tailoring the dispersion characteristics of the silicon nanowire waveguide.
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| 4. |
- Kataria, Himanshu, et al.
(författare)
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Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon
- 2014
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 20:4, s. 8201407-
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we propose a strategy to achieve monolithic integration of III-Vs on Si for photonic integration through a simple process. By mimicking the SiO2/Si/SiO2 waveguide necessary to couple light from the gain medium on its top, we adopt a similar to 2 mu m thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (similar to 1. 55 mu m) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III-Vs and Si on same chip.
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| 5. |
- Lapisa, Martin, et al.
(författare)
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Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS
- 2011
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 17:3, s. 629-644
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Tidskriftsartikel (refereegranskat)abstract
- Wafer-level heterogeneous integration technologies for microoptoelectromechanical systems (MOEMS), microelectromechanical systems (MEMS), and nanoelectromechanical systems (NEMS) enable the combination of dissimilar classes of materials and components into single systems. Thus, high-performance materials and subsystems can be combined in ways that would otherwise not be possible, and thereby forming complex and highly integrated micro-or nanosystems. Examples include the integration of high-performance optical, electrical or mechanical materials such as monocrystalline silicon, graphene or III-V materials with integrated electronic circuits. In this paper the state-of-the-art of wafer-level heterogeneous integration technologies suitable for MOEMS, MEMS, and NEMS devices are reviewed. Various heterogeneous MOEMS, MEMS, and NEMS devices that have been described in literature are presented.
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| 6. |
- Larsson, Anders, 1957
(författare)
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Advances in VCSELs for communication and sensing
- 2011
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 17:6, s. 1552-1567
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Tidskriftsartikel (refereegranskat)abstract
- The vertical cavity surface emitting laser (VCSEL) has become a light source of great importance for industrial and consumer applications. This includes communication and sensing in particular, where dynamics and optical mode behavior are key performance characteristics. This tutorial treats relevant VCSEL basics, performance requirements and recent progress towards higher speed, higher single mode power and polarization control.
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| 7. |
- Li, Qiang, et al.
(författare)
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Experimental Demonstration of Plasmon Propagation, Coupling, and Splitting in Silver Nanowire at 1550-nm Wavelength
- 2011
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 17:4, s. 1107-1111
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Tidskriftsartikel (refereegranskat)abstract
- We experimentally demonstrate silver-nanowire-based plasmonic devices including the nanowaveguide, the nanocoupler, and the nanosplitter at optical communication wavelength of 1550 nm. The plasmon propagation loss in a 300-nm diameter silver nanowire is measured to be 0.3 dB/mu m and the effective propagation length is 14.5 mu m. This loss is comparatively lower than that at 980 nm. Two types of plasmonic functional devices based on the coupling between two silver nanowires, nanocouplers, and nanosplitters, are realized. For the nanocoupler, the experimental results show that the plasmonic modes can be efficiently coupled between two closely positioned nanowires. While for the nanosplitter, the plasmonic mode is split with a power ratio of 2.6:1. These demonstrations experimentally prove the feasibility of extending the operating wavelength of silver-nanowire-based plasmonic devices to current optical communication wavelength with a lower loss, which are thus important steps for potentially utilizing low-loss nanowire-based plasmonic components for photonic integrated circuits.
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| 8. |
- Li, Qiang, et al.
(författare)
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Experimental demonstration of plasmon propagation, coupling, and splitting in silver nanowire at 1550-nm wavelength
- 2011
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - : IEEE. - 1077-260X .- 1558-4542. ; 17:4, s. 1107-1111
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Tidskriftsartikel (refereegranskat)abstract
- We experimentally demonstrate silver-nanowire-based plasmonic devices including the nanowaveguide, the nanocoupler, and the nanosplitter at optical communication wavelength of 1550 nm. The plasmon propagation loss in a 300-nm diameter silver nanowire is measured to be 0.3 dB/μm and the effective propagation length is 14.5 μm. This loss is comparatively lower than that at 980 nm. Two types of plasmonic functional devices based on the coupling between two silver nanowires, nanocouplers, and nanosplitters, are realized. For the nanocoupler, the experimental results show that the plasmonic modes can be efficiently coupled between two closely positioned nanowires. While for the nanosplitter, the plasmonic mode is split with a power ratio of 2.6:1. These demonstrations experimentally prove the feasibility of extending the operating wavelength of silver-nanowire-based plasmonic devices to current optical communication wavelength with a lower loss, which are thus important steps for potentially utilizing low-loss nanowire-based plasmonic components for photonic integrated circuits.
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| 9. |
- Metcalf, A. J., et al.
(författare)
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High-Power Broadly Tunable Electrooptic Frequency Comb Generator
- 2013
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-4542 .- 1077-260X. ; 19:6
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Tidskriftsartikel (refereegranskat)abstract
- Broadband traveling-wave electrooptic modulators made of lithium niobate have reached a high level of technological maturity. They can provide simultaneously low V pi, sustain high power (both optical and RF) and yet provide low propagation loss. By combining together these features, we present a high-power handling, broadly tunable, electrooptic frequency comb generator. The device produces between 60 and 75 lines within -10 dB bandwidth over its full tuning range-from 6 to 18 GHz- and can handle up to 1 W of optical input power. This optical frequency comb platform is very well suited for applications in RF photonics and optical communications that require independent RF and optical tuning as well as high-repetition rates but moderate bandwidth.
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| 10. |
- Park, Hyundai, et al.
(författare)
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Device and Integration Technology for Silicon Photonic Transmitters
- 2011
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 17:3, s. 671-688
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Tidskriftsartikel (refereegranskat)abstract
- The device and integration technology for silicon photonic transmitters are reviewed in this paper. The hybrid silicon platform enables on-chip lasers to be fabricated with silicon photonic circuits and can be integrated in the CMOS back-end flow. Laser arrays from multiple die bonding and quantum well intermixing techniques are demonstrated to extend the spectral bandwidth from the laser array of the transmitter. Two modulator technologies, silicon modulators and hybrid silicon modulators, are also described.
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