Influence of the channel width on the threshold voltage modulation in MOSFETs

• The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Field-effect transistors

channel width

threshold voltage modulation

MOSFET

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)